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Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy

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Scanning Probe Microscopy in Nanoscience and Nanotechnology 2

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Scanning tunnelingmicroscopy (STM) has been extremely successful due to the fact that it allowed visualizing atomic scale details of a clean surface layer in real space.

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Authors and Affiliations

  1. Department of Applied Physics, COBRA Inter-University Research Institute, Eindhoven University of Technology, 513, Eindhoven, 5600 MB, The Netherlands

    J. K. Garleff & P. M. Koenraad

  2. Semiconductors group, Institute for Systems based on Optoelectronics and Microtechnology (ISOM) – Universidad Politécnica de, Ciudad Universitaria s/n, 28040, Madrid, Spain

    J. M. Ulloa

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  1. J. K. Garleff
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  1. Nanoprobe Lab. Bio- & Nanotechnology &, Biomimetics (NLB²), Ohio State University, West 19th Avenue 201, Columbus, 43210-1142, Ohio, USA

    Bharat Bhushan

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Garleff, J.K., Ulloa, J.M., Koenraad, P.M. (2011). Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy. In: Bhushan, B. (eds) Scanning Probe Microscopy in Nanoscience and Nanotechnology 2. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-10497-8_11

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