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Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy

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Technology of Gallium Nitride Crystal Growth

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 133))

Abstract

Positron annihilation spectroscopy is an experimental technique that allows for the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter first gives a short introduction to positron annihilation techniques, and then proceeds to present an overview of the positron studies of vacancy defects and impurities in bulk and quasi-bulk GaN. Both the in-grown and processing induced defects are addressed.

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Authors and Affiliations

  1. Department of Applied Physics, Helsinki University of Technology, 1100, FI-02015, TKK Espoo, Finland

    Filip Tuomisto

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  1. Filip Tuomisto
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Correspondence to Filip Tuomisto .

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Editors and Affiliations

  1. Inst. Materials Research (IMR), Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Dirk Ehrentraut

  2. Integrierte Systeme und, Bauelementetechnologie (IISB), Fraunhofer Institut für, Schottkystr. 10, Erlangen, 91058, Germany

    Elke Meissner

  3. Inst. High-Pressure Physics, PAN Warszawa, Sokolowska 29/37, Warszawa, 01-687, Poland

    Michal Bockowski

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Tuomisto, F. (2010). Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy. In: Ehrentraut, D., Meissner, E., Bockowski, M. (eds) Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04830-2_14

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  • DOI: https://doi.org/10.1007/978-3-642-04830-2_14

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