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Technology of Gallium Nitride Crystal Growth pp 245–273Cite as

Low Pressure Solution Growth of Gallium Nitride

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 133))

Abstract

Because of the extremely high decomposition pressure of GaN at its melting point [1], it is technically unfeasible to grow GaN from the melt by means of classical crystal growth techniques, like Czochralski, Bridgman, or Vertical Gradient Freeze, commonly used for the production of industrially important materials like silicon, GaAs, and many more.

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Author information

Authors and Affiliations

  1. Department of Crystal Growth, Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058, Erlangen, Germany

    E. Meissner, S. Hussy & J. Friedrich

Authors
  1. E. Meissner
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  2. S. Hussy
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  3. J. Friedrich
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Corresponding author

Correspondence to E. Meissner .

Editor information

Editors and Affiliations

  1. Inst. Materials Research (IMR), Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Dirk Ehrentraut

  2. Integrierte Systeme und, Bauelementetechnologie (IISB), Fraunhofer Institut für, Schottkystr. 10, Erlangen, 91058, Germany

    Elke Meissner

  3. Inst. High-Pressure Physics, PAN Warszawa, Sokolowska 29/37, Warszawa, 01-687, Poland

    Michal Bockowski

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Meissner, E., Hussy, S., Friedrich, J. (2010). Low Pressure Solution Growth of Gallium Nitride. In: Ehrentraut, D., Meissner, E., Bockowski, M. (eds) Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04830-2_12

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  • DOI: https://doi.org/10.1007/978-3-642-04830-2_12

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  • Print ISBN: 978-3-642-04828-9

  • Online ISBN: 978-3-642-04830-2

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