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High Pressure Solution Growth of Gallium Nitride

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Technology of Gallium Nitride Crystal Growth

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 133))

Abstract

State-of-the-art high pressure solution (HPS) growth of gallium nitride is presented in this chapter. The spontaneous crystallization and seeded growth are described in detail from the technological point of view. Two classes of pressure-grown crystals and their use as substrates for blue laser diodes (LDs) are demonstrated.

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Author information

Authors and Affiliations

  1. Institute of High Pressure Physics, Polish Academy of Sciences, 01-142, Warsaw, Sokołwska 29/37, Poland

    Michal Boćkowski & Izabella Grzegory

  2. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142, Warsaw, Poland

    Pawel Strąk & Sylwester Porowski

Authors
  1. Michal Boćkowski
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  2. Pawel Strąk
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  3. Izabella Grzegory
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  4. Sylwester Porowski
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Corresponding author

Correspondence to Michal Boćkowski .

Editor information

Editors and Affiliations

  1. Inst. Materials Research (IMR), Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Dirk Ehrentraut

  2. Integrierte Systeme und, Bauelementetechnologie (IISB), Fraunhofer Institut für, Schottkystr. 10, Erlangen, 91058, Germany

    Elke Meissner

  3. Inst. High-Pressure Physics, PAN Warszawa, Sokolowska 29/37, Warszawa, 01-687, Poland

    Michal Bockowski

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Boćkowski, M., Strąk, P., Grzegory, I., Porowski, S. (2010). High Pressure Solution Growth of Gallium Nitride. In: Ehrentraut, D., Meissner, E., Bockowski, M. (eds) Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04830-2_10

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  • DOI: https://doi.org/10.1007/978-3-642-04830-2_10

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  • Print ISBN: 978-3-642-04828-9

  • Online ISBN: 978-3-642-04830-2

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