Abstract
The construction and the physical background of operation of floating gate, nanocrystal, silicon nitride-based, phase-change, ferroelectric and magnetoresistive memories are breafly summarized.
Keywords
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Horváth, Z.J., Basa, P. (2009). New Trends in Non-volatile Semiconductor Memories. In: Rudas, I.J., Fodor, J., Kacprzyk, J. (eds) Towards Intelligent Engineering and Information Technology. Studies in Computational Intelligence, vol 243. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-03737-5_23
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DOI: https://doi.org/10.1007/978-3-642-03737-5_23
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