Abstract
In the following sections some practical aspects of using lock-in thermography in the functional diagnostics of electronic components will be discussed and illustrated by measurement examples of a typical, thermally thin sample (solar cell) and a thermally thick one (integrated circuit). All these discussions are based on the theoretical findings presented in Chap. 4Section 5.1 discusses the question which of the images available from a lock-in thermography experiment (0° image, —90° image, amplitude image, phase image, or 0°/—90° image) is most appropriate to display certain details of different heat source distributions. In Sect. 5.2, the influence of the lock-in frequency on the obtained signal amplitude and lateral resolution of the thermograms will be discussed and demonstrated for different heat source geometries. In Sect. 5.3, the influence of a spatially varying IR emissivity will be discussed (emissivity contrast), and different ways to overcome this influence will be introduced and demonstrated. Section 5.4 describes the technique of measuring local I-V characteristics thermally (LIVT). In addition, it will be shown there how a non-destructivemapping of the so-called n-factor of exponential I-V characteristics is possible. Finally, in Sect. 5.4 a simple technique will be introduced to distinguish Joule type heating from Peltier effects in lock-in thermography experiments on resistive samples.
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© 2010 Springer-Verlag Berlin Heidelberg
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Breitenstein, O., Warta, W., Langenkamp, M. (2010). Measurement Strategies. In: Lock-in Thermography. Springer Series in Advanced Microelectronics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02417-7_5
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DOI: https://doi.org/10.1007/978-3-642-02417-7_5
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Publisher Name: Springer, Berlin, Heidelberg
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Online ISBN: 978-3-642-02417-7
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