Abstract
A metal of sufficiently high work function causes the electron density of an n-type semiconductor to be much lower than determined by its doping in the bulk, causing a space charge near the electrode. The bias-induced shift and deformation of this space charge determines the corresponding changes in the current. An understanding of this interrelation is the key for deriving the current–voltage characteristics of such a Schottky barrier device.
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© 2009 Springer-Verlag Berlin Heidelberg
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Böer, K.W. (2009). The Schottky Barrier. In: Introduction to Space Charge Effects in Semiconductors. Springer Series in Solid-State Sciences, vol 160. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02236-4_3
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DOI: https://doi.org/10.1007/978-3-642-02236-4_3
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Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-02237-1
Online ISBN: 978-3-642-02236-4
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