Abstract
The basic relations of the creation of space-charge regions caused by inhomogeneous doping can best be studied in a semiconductor with an abrupt step in the density of shallow donors (an nn+-junction). The interrelations to electric fields and currents are transparent and present the foundation for more complex space-charge effects.
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© 2009 Springer-Verlag Berlin Heidelberg
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Böer, K.W. (2009). Creation of Space-Charge Regions in Solids. In: Introduction to Space Charge Effects in Semiconductors. Springer Series in Solid-State Sciences, vol 160. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02236-4_2
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DOI: https://doi.org/10.1007/978-3-642-02236-4_2
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Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-02237-1
Online ISBN: 978-3-642-02236-4
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