Abstract
The spherical Si single crystal with 1mmφ has intensively attracted technological interests, since the cutting loss required for Si wafer fabrication can be reduced by 20% in terms of the solar cell application. The basic understanding of crystal growth of Si single crystal ingots cannot be applied directly to spherical single crystals because the critical issue to be controlled is not growth, as for ingots, but nucleation from the undercooled melt for spheres. However, the nucleation is difficult to be controlled externally. In this chapter, our novel approach to grow spherical single crystals is presented after a short review of the historical background for spherical solar cells.
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References
private communication, K. Taira, Kyosemi co[AU1]
N. Tanaka, Nikkei Microdevices, 2006, March, 25–45 [in Japanese]
M.B. Prince, 14th Annual Proceedings of Power Sources Conference, 26 (1960)
W.R. McKee, IEEE Trans. Components Hybrids Manuf. Technol. 5, 336 (1982)
Ball Semiconductor Technology conference, San Francisco, CA, 1998 (It can be purchased at website.)
R. Toda, Ceramics 36, 133 (2001) [in Japanese]
M. Yoshida, Nikkei Electron. Nov, 173 (2000) [in Japanese]
Ball Semiconductor Technology conference, San Francisco, CA, 1998 (It is available at http://www.ball.co.jp/sale/index.html)
M. Murozono, Energy 37, 46 (2004) [in Japanese]
K. Taira, N. Kogo, H. Kikuchi, N. Kumagai, N. Kuratani, I. Inagawa, S. Imoto, J. Nakata, M. Biancardo, Tech. Dig. PVSEC-15, 202 (2005)
S. Masuda, K. Takagi, Y.-S. Kang, A. Kawasaki, J. Jpn. Soc. Powder Metall. 51, 646 (2004)
W. Dong, K. Takagi, S. Masuda, A. Kawasaki, J. Jpn. Soc. Powder Metall. 53, 346 (2006)
Y.S. Sung, H. Takeya, K. Togano, Rev. Sci. Instrum. 72, 4419 (2001)
C.G. Levi, R. Mehrabian, Metall. Trans. A 13A, 221 (1982)
K. Nagashio, K. Kuribayashi, Acta Mater. 49, 1947 (2001)
T. Aoyama, Y. Takamura, K. Kuribayashi, Metall. Mater. Trans. A 30A, 1333 (1999)
Z. Jian, K. Nagashio, K. Kuribayashi, Metall. Mater. Trans. A 33A, 2947 (2002)
K. Nagashio, H. Okamoto, K. Kuribayashi, I. Jimbo, Metall. Mater. Trans. A 36A, 3407 (2005)
K. Nagashio, K. Kuribayashi, Acta Mater. 53, 3021 (2005)
K. Nagashio, K. Kuribayashi, J. Jpn. Assoc. Cryst. Growth 32, 314 (2005) [in Japanese]
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, K. Nakajima, Scripta Mater. 57, 81 (2007)
K. Nagashio, M. Adachi, K. Higuchi, A. Mizuno, M. Watanabe, K. Kuribayashi, Y. Katayama, J. Appl. Phys. 100, 033524 (2006)
K. Nagashio, K. Nozaki, K. Kuribayashi, Y. Katayama, Appl. Phys. Lett. 91, 061916 (2007)
A. Karma, Int. J. Nonequilib. Process. 11, 201 (1998)
T. Aoyama, K. Kuribayashi, Acta Mater. 51, 2297 (2003)
K. Nagashio, H. Okamoto, H. Ando, K. Kuribayashi, I. Jimbo, Jpn. J. Appl. Phys. 45, L623 (2006)
J.H. Perepezko, in Proceedings of the 2nd Int. Conf. Rapid Solidification Processing, ed. by R. Mehrabian et al. (Claitor's Pub. Division, Baton Rouge, LA, 1980), p. 56
Z. Liu, T. Nagai, A. Masuda, M. Kondo, J. Appl. Phys. 101, 093505 (2007)
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Nagashio, K., Kuribayashi, K. (2009). Crystal Growth of Spherical Si. In: Nakajima, K., Usami, N. (eds) Crystal Growth of Si for Solar Cells. Advances in Materials Research, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02044-5_8
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DOI: https://doi.org/10.1007/978-3-642-02044-5_8
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