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Crystal Growth of Si for Solar Cells pp 97–119Cite as

New Crystalline Si Ribbon Materials for Photovoltaics

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Part of the book series: Advances in Materials Research ((ADVSMATERIALS,volume 14))

Abstract

The objective of this chapter is to review, for photovoltaic application, the current status of crystalline silicon ribbon technologies as an alternative to wafers originating from ingots. Increased wafer demand, the current silicon feedstock shortage and the need of a substantial module cost reduction are the main issues that must be faced in the booming photovoltaic market. Ribbon technologies make excellent use of the silicon, as wafers are crystallised directly from the melt in the desired thickness and no kerf losses occur. Therefore, they offer a high potential to significantly reduce photovoltaic electricity costs when compared to wafers cut from ingots. Nevertheless, the defect structure present in the ribbon silicon wafers can limit material quality and cell efficiency.

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  1. University of Konstanz, Jacob-Burckhardt-Str. 29, 78464, Konstanz, Germany

    Giso Hahn, Axel Schönecker & Astrid Gutjahr

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  1. Giso Hahn
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  2. Axel Schönecker
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  1. Inst. Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Kazuo Nakajima

  2. Inst. Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Noritaka Usami

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Hahn, G., Schönecker, A., Gutjahr, A. (2009). New Crystalline Si Ribbon Materials for Photovoltaics. In: Nakajima, K., Usami, N. (eds) Crystal Growth of Si for Solar Cells. Advances in Materials Research, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02044-5_7

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