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Crystal Growth of Si for Solar Cells pp 193–218Cite as

Polycrystalline Silicon Thin-Films Formed by the Aluminum-Induced Layer Exchange (ALILE) Process

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Part of the book series: Advances in Materials Research ((ADVSMATERIALS,volume 14))

Abstract

Thin, large-grained polycrystalline Si (poly-Si) films can be formed on foreign substrates (e.g., glass) by the aluminum-induced layer exchange (ALILE) process, which is based on the aluminum-induced crystallization (AIC) of amorphous Si (a-Si). During an annealing step, below the eutectic temperature of the Al/Si system (577°C), the initial substrate/Al/a-Si stack is transformed into a substrate/poly-Si/Al(+Si) stack. In this chapter, the ALILE process itself and the properties of the resulting poly-Si films are discussed in detail from the scientific as well as technological point of view.

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Authors and Affiliations

  1. Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Institute Silicon Photovoltaics, Kekulestr. 5, D-12489, Berlin, Germany

    Stefan Gall

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  1. Stefan Gall
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  1. Inst. Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Kazuo Nakajima

  2. Inst. Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Noritaka Usami

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Gall, S. (2009). Polycrystalline Silicon Thin-Films Formed by the Aluminum-Induced Layer Exchange (ALILE) Process. In: Nakajima, K., Usami, N. (eds) Crystal Growth of Si for Solar Cells. Advances in Materials Research, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02044-5_12

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