Abstract
Flash lamp annealing (FLA) has attracted attentions as a technique of rapidly crystallizing precursor a-Si films to form poly-Si films with high crystallinity on low-cost glass substrates. In this chapter, a brief explanation on fundamental physics typically seen in nonthermal equilibrium annealing and in utilization of metastable a-Si as precursor films have been given. Recent findings concerning FLA-triggered crystallization of micrometer-order-thick a-Si films and microstructures of the poly-Si films are also introduced.
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Ohdaira, K. (2009). Thin-Film Poly-Si Formed by Flash Lamp Annealing. In: Nakajima, K., Usami, N. (eds) Crystal Growth of Si for Solar Cells. Advances in Materials Research, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02044-5_11
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