Abstract
Single-atom transistors are a novel approach opening intriguing perspectives for quantum electronics and logics at room temperature. They are based on the stable and reproducible operation of atomic-scale switches, which allow us to open and close an electrical circuit by the controlled reconfiguration of silver atoms within an atomic-scale junction. We demonstrate the operation of such atomic quantum switches, and discuss in more detail the process during which these switches are formed by repeated electrochemical deposition and dissolution. Only after repeated deposition/dissolution cycles, a bistable contact is formed on the atomic scale, which allows to switch between a configuration where the contact is closed, the conducting state or “on”-state, and a configuration where the contact is open, the nonconducting state or “off”-state. The controlled fabrication of these well-ordered atomic-scale metallic contacts is of great interest: it is expected that the experimentally observed high percentage of point contacts with a conductance at noninteger multiples of the conductance quantum G 0 = 2e 2 ∕ h( ≈ 1 ∕ 12. 9 kΩ) in conventional experiments with simple metals is correlated with defects resulting from the fabrication process. Our combined electrochemical deposition and annealing method allows the controlled fabrication of point contacts with preselectable integer quantum conductance. The resulting conductance measurements on silver point contacts are compared with tight-binding-like conductance calculations of modeled idealized junction geometries between two silver crystals with a predefined number of contact atoms.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
F.-Q. Xie, Ch. Obermair, Th. Schimmel, in Nanoscale Devices – Fundamentals and Applications, ed. by R. Gross et al., (Springer, New York, 2006), p. 153
F.-Q. Xie, R. Maul, Ch. Obermair, E.B. Starikov, W. Wenzel, G. Schön, Th. Schimmel, Appl. Phys. Lett. 93(4), 3103 (2008)
A. Nitzan, M.A. Ratner, Science 300, 1384 (2003)
C. Joachim, J.K. Gimzewski, A. Aviram, Nature 408, 541 (2000)
M.A. Reed, C. Zhou, C.J. Muller, T.P. Burgin, J. M. Tour, Science 278, 252 (1997)
X.D. Cui, Science 294, 571 (2001)
S.J. Tans, A.R.M. Verschueren, C. Dekker, Nature 393, 49 (1998)
C.Z. Li, A. Bogozi, W. Huang, N.J. Tao, Nanotechnology 10, 221 (1999)
F.-Q. Xie, L. Nittler, Ch. Obermair, Th. Schimmel, Phys. Rev. Lett. 93, 128303 (2004)
K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Nature 433, 47 (2005)
F. Xie, R. Maul, A. Augenstein, Ch. Obermair, E.B. Starikov, W. Wenzel, G. Schön, Th. Schimmel, Nano Lett. 8(12), 4493 (2008)
N. Agraït, A. Levy Yeyati, J.M. van Ruitenbeek, Phys. Rep. 377, 81 (2003)
N. Agraït, J.G. Rodrigo, S. Vieira, Phys. Rev. B 47, 12345 (1993)
J. I. Pascual, Phys. Rev. Lett. 71, 1852 (1993)
J.M. Krans, J.M. van Ruitenbeek, V.V. Fisun, I.K. Yanson, and L.J. de Jongh, Nature 375, 767 (1995)
E. Scheer, Nature 394, 154 (1998)
C.Z. Li, N.J. Tao, Appl. Phys. Lett. 72, 894 (1998)
C.Z. Li, A. Bogozi, W. Huang, N.J. Tao, Nanotechnology 10, 221 (1999)
A.F. Morpurgo, C.M. Marcus, D.B. Robinson, Appl. Phys. Lett. 74, 2084 (1999)
C.Z. Li, H.X. He, N.J-Tao, Appl. Phys. Lett. 77, 3995 (2000)
J. Li, T. Kanzaki, K. Murakoshi, Y. Nakato, Appl. Phys. Lett. 81, 123 (2002)
F. Elhoussine, S. Mátéfi-Tempfli, A. Encinas, L. Piraux, Appl. Phys. Lett. 81, 1681 (2002)
Ch. Obermair, R. Kniese, F.-Q. Xie, Th. Schimmel, in Molecular Nanowires and Other Quantum Objects, ed. by A.S. Alexandrov, J. Demsar, I.K. Yanson, (Kluwer Academic Publishers, The Netherlands, 2004), p. 233
D.M. Eigler, C.P. Lutz, W.E. Rudge, Nature 352, 600 (1991)
H. Fuchs, Th. Schimmel, Adv. Mater. 3, 112 (1991)
F.-Q. Xie, Ch. Obermair, Th. Schimmel, Solid State Commun. 132, 437 (2004)
M. Brandbyge, K.W. Jacobsen, J.K. Norskov, Phys. Rev. B 55, 2637 (1997)
J.C. Cuevas, A. Levy Yeyati, A. Martín-Rodero, Phys. Rev. Lett. 80, 1066 (1998)
C.E. Bach, M. Giesen, H. Ibach, T.L. Einstein, Phys. Rev. Lett. 78, 4225 (1997)
C. Friesen, N. Dimitrov, R.C. Cammarata, K. Sieradzki, Langmuir 17, 807 (2001)
Gmelin’s Handbook of Inorganic Chemistry, 8. edn. (Verlag Chemie, Weinheim, 1973), Silver, Part A4, p. 220
X. Guang-Can, J. Cluster Sci. 17, 457 (2006)
J. Heurich, J.-C. Cuevas, W. Wenzel, G. Schön, Phys. Rev. Lett. 88, 256803 (2002)
P. Damle, A.W. Ghosh, S. Datta, Chem. Phys. 281, 171 (2002)
R. Hoffmann, J. Chem. Phys. 39, 1397 (1963)
V. Rodrigues, J. Bettini, A.R. Rocha, L.G.C. Rego, D. Ugarte, Phys. Rev. B 65, 153402 (2002)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2009 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Obermair, C., Xie, F., Maul, R., Wenzel, W., Schön, G., Schimmel, T. (2009). Single-Atom Transistors: Switching an Electrical Current with Individual Atoms. In: Hahn, H., Sidorenko, A., Tiginyanu, I. (eds) Nanoscale Phenomena. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-00708-8_11
Download citation
DOI: https://doi.org/10.1007/978-3-642-00708-8_11
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-00707-1
Online ISBN: 978-3-642-00708-8
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)