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Interface Modification of Pentacene OFET Gate Dielectrics

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Abstract

Pentacene organic field effect transistors (OFETs) electrical and structural properties have already been analysed from the point of view of different gate dielectric and growth conditions utilization. The AFM and micro Raman investigations show that the first organic monolayer at the pentacene/dielectric interface are essential determinants of carrier transport phenomena and achievable drain current of pentacene OFETs.

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Correspondence to Ján Jakabovič .

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© 2009 Springer-Verlag Berlin Heidelberg

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Jakabovič, J. et al. (2009). Interface Modification of Pentacene OFET Gate Dielectrics. In: Al-Shamery, K., Horowitz, G., Sitter, H., Rubahn, HG. (eds) Interface Controlled Organic Thin Films. Springer Proceedings in Physics, vol 129. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-95930-4_30

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