Abstract
A vertical sidewall surface piezoresistor technology is developed for single-wafer-processed MEMS of in-plane lateral piezoresistors configuration. The technology based on the deep reactive ion etching (DRIE) and the ion implantation technology can be used to integrate piezoresistive sensor on the vertical sidewall of trench or beam easily. The developed technology has been successfully applied to a nano-positioning micro xy-stage integrated with displacement sensor based on the piezo-resistance effect, in which the piezoresistor has been fabricated on the vertical sidewall surface of the detecting beam to improve the displacement sensitivity and resolution of sensor. Besides satisfactory electric principles of the piezoresistors obtained, the experimental results also verify the sensitivity of the fabricated piezoresistive sensors is better than 0.903mV/μm without amplification, the linearity is better than 0.814%, which are well with design.
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© 2008 Springer-Verlag Berlin Heidelberg
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Wang, J., Sun, L., Rong, W., Li, X. (2008). A Vertical Sidewall Surface Piezoresistor Technology Based on DRIE and Its Typical Application in Micro xy-Stages. In: Xiong, C., Liu, H., Huang, Y., Xiong, Y. (eds) Intelligent Robotics and Applications. ICIRA 2008. Lecture Notes in Computer Science(), vol 5315. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88518-4_19
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DOI: https://doi.org/10.1007/978-3-540-88518-4_19
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-88516-0
Online ISBN: 978-3-540-88518-4
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