Abstract
Overcoming mathematical difficulties, it is finally solved the last case (the real-symmetry bands of zinc-blend structure bulk semiconductors interacting with the non-linearly polarized laser) of the very long-standing problem (the effects of external field on crystal spectrum), initiated by L.D. Landau 77 years ago.
The existence of a qualitatively new effect, which is simultaneously removing the s (spin index) and l-h (light, heavy holes) degeneracy, is theoretically proved. The “configuration” of the spliting of main quasi-band edges is strongly dependent on the polarization character of laser and is changed when the frequency changes from the values smaller than (or equal to) the band gap to the ones greater the band gap. The numerical evaluation shows that the effect is sufficiently strong for observation, for which a pump- probe experiment is proposed.
For the first time, paying attention to the uniqueness of the main quasi-band conception, all of the principally basic effects are clearly classified.
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Quang, N.V. (2009). Principally Basic Effects of Laser on the Bulk Semiconductor Bands. In: Cat, D.T., Pucci, A., Wandelt, K. (eds) Physics and Engineering of New Materials. Springer Proceedings in Physics, vol 127. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88201-5_41
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DOI: https://doi.org/10.1007/978-3-540-88201-5_41
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