Abstract
Experimental investigations of four-wave mixing (FWM) in Semiconductor Optical Amplifier (SOA) modules have been performed. SOA modules were prepared based on 1550 nm InGaAsP/InP SOA chips. The distributed-feedback (DFB) laser modules based on the 1.55 μm InGaAsP/InP BH λ/4 phase-shifted DFB laser chips have also been prepared for the light sources. The dependence of the FWM effect on the frequency detuning between pump and probe signals, SOA dc operating currents and input pump signal power were studied. The FWM effect is the result of nonlinear interactions between the medium and the optical fields, some physical FWM mechanisms are proposed for the observed effect.
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Mien, V., Nghiem, V., Cong, T.Q., Truong, P.V. (2009). InGaAsp/InP Semiconductor Optical Amplifiers and their Some Nonlinear Effects. In: Cat, D.T., Pucci, A., Wandelt, K. (eds) Physics and Engineering of New Materials. Springer Proceedings in Physics, vol 127. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88201-5_39
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DOI: https://doi.org/10.1007/978-3-540-88201-5_39
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