Abstract
A variational approach is given for the effect from single-side modulation doping on low-temperature transport properties of the charge carriers confined in a square infinite quantum well (QW). We obtained analytic expressions which describe the doping effects on the carrier distribution in the well, their roughness-induced scattering in the in-plane and screening by them. The calculation of the transport lifetimes is performed for holes in a SiGe/Ge/SiGe square QW, and the result is found in quantitative agreement with recently measured dependence on experimental conditions such as channel width and carrier density.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
F. Schaffler, Semiconductor Science and Technology 12, 1515 (1997).
T. E. Whall and E. H. C. Parker, Journal of Physics D 31, 1397 (1998).
Y. H. Xie, D. Monroe, E. A. Fitzgerald, P. J. Silverman, F. A. Thiel, and G. P. Watson, Applied Physics Letters 63, 2263 (1993).
T. Irisawa, H. Miura, T. Ueno, Y. Shiraki, Japanese Journal of Applied Physics 40, 2964 (2001).
R. J. H. Morris, T. J. Grasby, R. Hammond, M. Myronov, O. A. Mironov, D. R. Leadley, T. E. Whall, E. H. C. Parker, M. T. Currie, C. W. Leitz, and E. A. Fitzgerald, Semiconductor Science and Technology 19, L106 (2004).
A. Gold, Physical. Review. B 35, 723 (1987).
T. Irisawa, M. Myronov, E. H. C. Parker, K. Nakagawa, M. Murata, S. Koh, and Y. Shiraki, Applied Physics Letters 82, 1425 (2003).
M. Myronov, K. Sawano, and Y. Shiraki, Applied Physics Letters 88, 252115 (2006).
B. Rossner, D. Chrastina, G. Isella, H. von Kanel, Applied Physics Letters 84, 3058 (2004).
R. M. Feenstra and M. A. Lutz, Journal of Applied Physics 78, 6091 (1995).
D. N. Quang, N. H. Tung, D. T. Hien, and H. A. Huy, Physical. Review. B 75, 073305 (2007).
D. N. Quang, N. H. Tung, V. N. Tuoc, N. V. Minh, H. A. Huy, and D. T. Hien, Physical. Review. B 74, 205312 (2006).
T. Ando, A. B. Fowler, and F. Stern, Reviews of Modern Physics 54, 437 (1982).
Kahan, M. Chi, and L. Friedman, Journal of Applied Physics 75, 8012 (1994).
G. Van de Walle,Physical. Review. B 39, 1871 (1989).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2009 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Tung, N.H., Quang, D.N., Hien, D.T. (2009). Effect of Single-Side Modulation Doping on Low-Temperature Transport Properties in Square Infinite Quantum Wells. In: Cat, D.T., Pucci, A., Wandelt, K. (eds) Physics and Engineering of New Materials. Springer Proceedings in Physics, vol 127. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88201-5_2
Download citation
DOI: https://doi.org/10.1007/978-3-540-88201-5_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-88200-8
Online ISBN: 978-3-540-88201-5
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)