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Single Semiconductor Quantum Dots pp 31–69Cite as

Growth and control of optically active quantum dots

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Abstract

We provide a general overview on the different methods employed to fabricate optically active quantum dots, i.e., quantum dots which confine both electrons and holes in three dimensions. All the techniques are based on epitaxial growth of semiconductor heterostructures. We first discuss bottom-up methods based on self-assembled growth, since they are the most used for single dot investigations. We then mention top-down lithographic techniques, which allow the fabrication of dots at controlled positions. Finally we show how a clever combination of top-down and bottom-up approaches may open the route to the fabrication of quantum dots with well defined spatial and spectral properties, required for scalable devices.

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  1. Institute for Integrative Nanosciences, IFW Dresden Helmholtzstrasse. 20, D-01069, Dresden, Germany

    Armando Rastelli, Suwit Kiravittaya & Oliver G. Schmidt

  2. Max-Planck-Institute for Solid State Research, Heisenbergstr. 1, D-70569, Stuttgart, Germany

    Armando Rastelli

Authors
  1. Armando Rastelli
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  2. Suwit Kiravittaya
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  3. Oliver G. Schmidt
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Correspondence to Armando Rastelli .

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Editors and Affiliations

  1. Institut für Halbleiteroptik und, Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, Stuttgart, 70569, Germany

    Peter Michler

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© 2009 Springer-Verlag Berlin Heidelberg

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Rastelli, A., Kiravittaya, S., Schmidt, O.G. (2009). Growth and control of optically active quantum dots. In: Michler, P. (eds) Single Semiconductor Quantum Dots. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-87446-1_2

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