Abstract
This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III–V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.
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Chatterjee, S., Grunwald, T., W.Koch, S., Khitrova, G., Gibbs, H.M., Hey, R. (2009). Terahertz Detection of Many-Body Signatures in Semiconductor Heterostructures. In: Haug, R. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 48. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85859-1_21
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