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Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy

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Advances in Solid State Physics

Part of the book series: Advances in Solid State Physics ((ASSP,volume 48))

Abstract

The synthesis and properties of catalyst-free III–V nanowires with MBE is reviewed. The two main methods are Selective Area Epitaxy and gallium-assisted synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. Finally, the excellent structure and ultra-high purity are presented by Raman and Photoluminescence spectroscopy.

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Author information

Authors and Affiliations

  1. Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

    D. Spirkoska, C. Colombo & M. Heiß

Authors
  1. D. Spirkoska
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  2. C. Colombo
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  3. M. Heiß
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  4. M. Heigoldt
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  5. G. Abstreiter
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  6. A. Fontcuberta i Morral
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Editor information

Editors and Affiliations

  1. Abteilung Nanostrukturen Institut für Festkörperphysik, Universität Hannover, Appelstr 2, 30167 Hannover, Germany

    Rolf Haug

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Spirkoska, D., Colombo, C., Heiß, M., Heigoldt, M., Abstreiter, G., i Morral, A.F. (2009). Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy. In: Haug, R. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 48. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85859-1_2

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