Conclusion and Future Research

In this elementary book, we have investigated the simplified first order Einstein relation within the domain of the empirically well-known and welladjusted Boltzmann transport equation. Such studies are extremely useful for practical analysis of the physical properties of semiconductor devices, in general.

Our analyses are valid under single electron approximation and invalid for totally quantized 3D wave vector space. The quantitative comparison between the theoretical formulations of the DMR for various materials under different physical conditions and the suggestion for the experimental determination of the same are not possible in many cases, as the experimental data of G are not available in the literature for all the compounds as considered here. Thus, the detailed experimental works are needed not only to uncover the phenomena, but also for an in-depth probing of the band structures of the different quantized materials which, in turn, control the key namely, the Boltzmann transport equation. In spite of such constraints, the new concepts, which have emerged from the present investigation, are really amazing in general and are discussed throughout the book.