Abstract
We report electrically detected electron-spin resonance (ESR) measurements in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Firstly, we clarify the origin of the ESR-induced resistivity change by optimizing the configuration among the Landau levels and the chemical potential. The observed decrease in the longitudinal resistivity shows that the primary cause is a change in the chemical potential, not a rise in the electron temperature. Heat flow in steady state under resonance conditions is also discussed. Secondly, we demonstrate a novel analysis of the resistivity change to deduce the spin-relaxation times. The longitudinal spin-relaxation time T 1 is obtained to be of the order of 1 ms in an inplane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession qualitatively explains the very long T 1.
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Matsunami, J., Okamoto, T. (2009). Electrical Detection of Electron-Spin Resonance in Two-Dimensional Systems. In: Fanciulli, M. (eds) Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures. Topics in Applied Physics, vol 115. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-79365-6_7
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DOI: https://doi.org/10.1007/978-3-540-79365-6_7
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