Monte Carlo Simulation of GaN Diode Including Intercarrier Interactions

  • A. Ashok
  • D. Vasileska
  • O. Hartin
  • S. M. Goodnick
Part of the Lecture Notes in Computer Science book series (LNCS, volume 4818)


Gallium Nitride (GaN) is becoming increasingly more attractive for a wide range of applications, such as optoelectronics, wireless communication, automotive and power electronics. Switching GaN diodes are becoming indispensable for power electronics due to their low on-resistance and capacity to withstand high voltages. A great deal of research has been done on GaN diodes over the decades but a major issue with previous studies is the lack of explicit inclusion of electron-electron interaction, which can be quite important for high carrier densities encountered. Here we consider this electron-electron interaction, within a non-parabolic band scheme, as the first attempt at including such effects when modeling nitride devices. Electron-electron scattering is treated using a real space molecular dynamics approach, which exactly models this interaction within a semi-classical framework. It results in strong carrier-carrier scattering on the biased contact of the resistor, where rapid carrier relaxation occurs.


Gallium Nitride Polar Optical Phonon Ionize Impurity Scattering Ensemble Monte Carlo Carrier Thermalization 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2008

Authors and Affiliations

  • A. Ashok
    • 1
  • D. Vasileska
    • 1
  • O. Hartin
    • 2
  • S. M. Goodnick
    • 1
  1. 1.Department of Electrical Engineering and Center for Solid State Electronics ResearchArizona State UniversityTempeUSA
  2. 2.Frescale IncTempeUSA

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