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Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs

  • Manuel Aldegunde
  • Antonio J. García-Loureiro
  • Karol Kalna
Part of the Lecture Notes in Computer Science book series (LNCS, volume 4818)

Abstract

A parallel 3D Monte Carlo simulator for the modelling of electron transport in nano-MOSFETs using the Finite Element Method to solve Poisson equation is presented. The solver is parallelised using a domain decomposition strategy, whereas the MC is parallelised using an approach based on the distribution of the particles among processors. We have obtained a very good scalability thanks to the Finite Element solver, the most computationally intensive stage in self-consistent simulations. The parallel simulator has been tested by modelling the electron transport at equilibrium in a 4 nm gate length double gate MOSFET.

Keywords

Monte Carlo Message Passing Interface Double Gate Finite Element Solver Domain Decomposition Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2008

Authors and Affiliations

  • Manuel Aldegunde
    • 1
  • Antonio J. García-Loureiro
    • 1
  • Karol Kalna
    • 2
  1. 1.Departamento de Electrónica y ComputaciónUniversidad de Santiago de CompostelaSantiago de CompostelaSpain
  2. 2.Device Modelling Group, Department of Electronics & Electrical EngineeringUniversity of GlasgowGlasgowUnited Kingdom

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