Summary
Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented (i.e., (001)) silicon wafers, which have fourfold symmetry, has been a longstanding challenge. We demonstrate that, by using symmetry-converted (111) silicon-on-insulator, we can integrate wurtzite-structure gallium nitride, which has threefold symmetry, with Si (001). The stability of the symmetry-converted Si (111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si (001) base wafers.
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Y. Guo, Y.F. Zhang, X.Y. Bao, T.Z. Han, Z. Tang, L.X. Zhang, W.G. Zhu, E.G. Wang, Q. Niu, Z.Q. Qiu, J.F. Jia, Z.X. Zhao, Q.K. Xue, Science 306, 1915 (2004)
J.A. Theobald, N.S. Oxtoby, M.A. Phillips, N.R. Champness, P.H. Beton, Nature 424, 1029 (2003)
T. Takeuchi, H. Amano, K. Hiramatsu, N. Sawaki, I. Akasaki, J. Cryst. Growth 115, 634 (1991)
T.D. Moustakas, T. Lei, R.J. Molnar, Phys. B 185, 36 (1993)
Z.T. Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q.K. Xue, Appl. Phys. Lett. 87, 032110 (2005)
Y. Yamada-Takamura, Z.T. Wang, Y. Fujikawa, T. Sakurai, Q.K. Xue, J. Tolle, P.L. Liu, A.V.G. Chizmeshya, J. Kouvetakis, I.S.T. Tsong, Phys. Rev. Lett. 95, 266105 (2005)
Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P.P. Zhang, M.G. Lagally, T. Sakurai, Appl. Phys. Lett. 90, 243107 (2007)
P.P. Zhang, E. Tevaarwerk, B.N. Park, D.E. Savage, G.K. Celler, I. Knezevic, P.G. Evans, M.A. Eriksson, M.G. Lagally, Nature 439, 703 (2006)
S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991)
T. Sasaki, T. Matsuoka, J. Appl. Phys. 64, 4531 (1988)
H. Okumura, S. Misawa, S. Yoshida, Appl. Phys. Lett. 59, 1058 (1991)
E.S. Hellman, MRS Internet J. Nitride Semicond. Res. 3, 11 (1998)
G. Mula, C. Adelmann, S. Moehl, J. Oullier, B. Daudin, Phys. Rev. B 64, 195406 (2001); N. Gogneau, E. Sarigiannidou, E. Monroy, S. Monnoye, H. Mank, B. Daudin, Appl. Phys. Lett. 85, 1421 (2004)
A.R. Smith, R.M. Feenstra, D.W. Greve, J. Neugebauer, J.E. Northrup, Phys. Rev. Lett. 79, 3934 (1997); Appl. Phys. A 66, S947 (1998)
A.R. Smith, R.M. Feenstra, D.W. Greve, M.S. Shin, M. Skowronski, J. Neugebauer, J.E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998)
Q.Z. Xue, Q.K. Xue, R.Z. Bakhtizin, Y. Hasegawa, I.S.T. Tsong, T. Sakurai, T. Ohno, Phys. Rev. B 59, 12604 (1999)
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)
R.I.G. Uhrberg, G.V. Hansson, J.M. Nicholls, P.E.S. Persson, S.A. Flodström, Phys. Rev. B 31, 3805 (1985); F.J. Himpsel, Th. Fauster, G. Hollinger, Surf. Sci. 132, 22 (1983)
J.M. Nicholls, B. Reihl, J.E. Northrup, Phys. Rev. B. 35, 4137 (1987)
J. Cao, D. Pavlidis, Y. Park, J. Singh, A. Eisenbach, J. Appl. Phys. 83, 3829 (1998)
S.Q. Zhou, A. Vantomme, B.S. Zhang, H. Yang, M.F. Wu, Appl. Phys. Lett. 86, 081912 (2005)
F. Schulze, A. Dadgar, J. Bläsing, A. Diez, A. Krost, Appl. Phys. Lett. 88, 121114 (2006)
Y. Fujikawa, T. Nagao, Y. Yamada-Takamura, T. Sakurai, T. Hashimoto, Y. Morikawa, K. Terakura, M.G. Lagally, Phys. Rev. Lett. 94, 086105 (2005)
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Fujikawa, Y., Yamada-Takamura, Y., Wang, Z.T., Yoshikawa, G., Sakurai, T. (2008). GaN Integration on Si via Symmetry-Converted Silicon-on-Insulator. In: Fujikawa, Y., Nakajima, K., Sakurai, T. (eds) Frontiers in Materials Research. Advances in Materials Research, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-77968-1_22
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DOI: https://doi.org/10.1007/978-3-540-77968-1_22
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