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X-Ray Topography Techniques for Defect Characterization of Crystals

  • Chapter
Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

Abstract

X-ray topography is the general term for a family of x-ray diffraction imaging techniques capable of providing information on the nature and distribution of structural defects such as dislocations, inclusions/precipitates, stacking faults, growth sector boundaries, twins, and low-angle grain boundaries in single-crystal materials. From the first x-ray diffraction image, recorded by Berg in 1931, to the double-crystal technique developed by Bond and Andrus in 1952 and the transmission technique developed by Lang in 1958 through to present-day synchrotron-radiation-based techniques, x-ray topography has evolved into a powerful, nondestructive method for the rapid characterization of large single crystals of a wide range of chemical compositions and physical properties, such as semiconductors, oxides, metals, and organic materials. Different defects are readily identified through interpretation of contrast using well-established kinematical and dynamical theories of x-ray diffraction. This method is capable of imaging extended defects in the entire volume of the crystal and in some cases in wafers with devices fabricated on them. It is well established as an indispensable tool for the development of growth techniques for highly perfect crystals (for, e.g., Czochralski growth of silicon) for semiconductor and electronic applications. The capability of in situ characterization during crystal growth, heat treatment, stress application, device operation, etc. to study the generation, interaction, and propagation of defects makes it a versatile technique to study many materials processes.

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Abbreviations

AB:

Abrahams and Burocchi

AC:

alternate current

AFM:

atomic force microscopy

CCD:

charge-coupled device

NSLS:

National Synchrotron Light Source

SC:

slow cooling

SR:

spreading resistance

SWBXT:

synchrotron white beam x-ray topography

TEM:

transmission electron microscopy

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Author information

Authors and Affiliations

  1. Department of Materials Science and Engineering, Stony Brook University, 310 Engineering Building, 11794-2275, Stony Brook, NY, USA

    Balaji Raghothamachar

  2. Department of Materials Science and Engineering, Stony Brook University, 11794-2275, Stony Brook, NY, USA

    Michael Dudley

  3. ARC Energy, 18 Celina Avenue, Unit 77, 03063, Nashua, NH, USA

    Govindhan Dhanaraj

Authors
  1. Balaji Raghothamachar
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  2. Michael Dudley
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  3. Govindhan Dhanaraj
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Corresponding authors

Correspondence to Balaji Raghothamachar , Michael Dudley or Govindhan Dhanaraj .

Editor information

Editors and Affiliations

  1. Advanced Renewable Energy Company, 18 Celina Avenue, 03063, Nashua, NH, USA

    Govindhan Dhanaraj Dr.

  2. Department of Geology, University of Mysore, Manasagangotri, 570 006, Mysore, India

    Kullaiah Byrappa Ph.D.

  3. University of North Texas, 1155 Union Circle, 76203-5017, Denton, TX, USA

    Vishwanath Prasad Dr.

  4. Department of Materials Science and Engineering, Stony Brook University, 11794-2275, Stony Brook, NY, USA

    Michael Dudley Dr.

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Raghothamachar, B., Dudley, M., Dhanaraj, G. (2010). X-Ray Topography Techniques for Defect Characterization of Crystals. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_42

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