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Liquid-Phase Epitaxy of Advanced Materials

  • Chapter
Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

Abstract

The performance of many electronic and optoelectronic devices critically depends on the structural quality and homogeneity of the base material, which is often an epitaxial film grown by either vapor-phase epitaxy (VPE) or liquid-phase epitaxy (LPE).

This chapter presents the state of the art in LPE growth of selected advanced materials:

  1. 1.

    High-temperature superconductors

  2. 2.

    Calcium gallium germanates (langasite-type materials)

  3. 3.

    III–V wide-bandgap nitrides.

It is not the aim, herein, to present LPE growth of more traditional III–V semiconductors (Si, Ge, GaAs, GaP, InP, GaP) and garnets, which have already been described extensively in the literature since about 1960. Instead, some of the most relevant literature references are given in the historical overview, which also provides a very good insight into the potential of LPE growth of newer materials. Despite the fact that LPE growth has gained less attention over the past decades, mainly due to the development of VPE growth techniques, there is a silver lining which clearly indicates that the highest-quality epitaxial films, for most efficient electronic and optoelectronic devices, will ultimately be achieved from liquid-assisted or LPE-grown films.

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Abbreviations

2-D:

two-dimensional

3-D:

three-dimensional

AFM:

atomic force microscopy

ALE:

arbitrary Lagrangian Eulerian

ALE:

atomic layer epitaxy

CGG:

calcium gallium germanate

CVD:

chemical vapor deposition

DVD:

digital versatile disk

ELO:

epitaxial lateral overgrowth

FWHM:

full width at half-maximum

HEMT:

high-electron-mobility transistor

HTSC:

high-temperature superconductor

HVPE:

halide vapor-phase epitaxy

HVPE:

hydride vapor-phase epitaxy

IR:

infrared

LAGB:

low-angle grain boundary

LAO:

LiAlO2

LD:

laser diode

LED:

light-emitting diode

LEEBI:

low-energy electron-beam irradiation

LG:

LiGaO2

LGN:

La3Ga5.5Nb0.5O14

LGO:

LaGaO3

LGS:

La3Ga5SiO14

LGT:

La3Ga5.5Ta0.5O14

LPE:

liquid-phase epitaxy

MBE:

molecular-beam epitaxy

MOCVD:

metalorganic chemical vapor deposition

MOCVD:

molecular chemical vapor deposition

MOVPE:

metalorganic vapor-phase epitaxy

NGO:

NdGaO3

NdBCO:

NdBa2Cu3O7-x

PCF:

primary crystallization field

PCF:

protein crystal growth facility

PVD:

physical vapor deposition

RF:

radiofrequency

SAW:

surface acoustical wave

SIMS:

secondary-ion mass spectrometry

TD:

Tokyo Denpa

TD:

threading dislocation

TSSG:

top-seeded solution growth

UV:

ultraviolet

VPE:

vapor-phase epitaxy

XRD:

x-ray diffraction

YBCO:

YBa2Cu3O7-x

YIG:

yttrium iron garnet

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    Christine F. Klemenz Rivenbark

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    Govindhan Dhanaraj Dr.

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Klemenz Rivenbark, C.F. (2010). Liquid-Phase Epitaxy of Advanced Materials. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_31

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