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Surface and Interface Chemistry for Gate Stacks on Silicon

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Into the Nano Era

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 106))

Abstract

The silicon metal-oxide-semiconductor field-effect transistor (MOSFET) has been at the heart of the information technology revolution. During the past four decades, we have witnessed an exponential increase in the integration density of logic circuits (“Moore’s law” [1]), powered by exponential reductions in MOSFET device size. Despite these changes, silicon oxide, usually grown by simple exposure to oxygen gas or water vapor at elevated temperatures, until recently remained the gate insulator of choice. Its success has been based on the wonderful properties of the silicon/silicon dioxide interface. This interface has only about 1012 cm−2 electrically active defects. And after a simple passivating hydrogen exposure, 1010 cm−2 defects remain—only one defect for every 100,000 interface atoms!

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Frank, M.M., Chabal, Y.J. (2009). Surface and Interface Chemistry for Gate Stacks on Silicon. In: Huff, H.R. (eds) Into the Nano Era. Springer Series in Materials Science, vol 106. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74559-4_6

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