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Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

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Dilute III-V Nitride Semiconductors and Material Systems

Part of the book series: Materials Science ((SSMATERIALS,volume 105))

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In this chapter, we review our investigations on the composition fluctuations of GaInNAs/GaAs(001) quantum wells and on the effect of the growth temperature in this feature. For this, we have analyzed GaInNAs quantum well samples grown at different temperatures in the range 360–460°C by transmission electron microscopy in diffraction contrast mode. Our results show a variation of the contrast as bright and dark regions along the quantum well, related to phase separation in the alloy. This variation becomes more severe on increasing the growth temperature, showing that the composition fluctuations are stimulated with this growth parameter. From the analysis of the structure factor of GaInNAs for the g002DF reflection, it is proposed that the observed compositional inhomogeneity of GaInNAs is due firstly to a fluctuation of the indium content and secondly to an out of phase N fluctuation, the latter occurring since nitrogen bonds preferentially to Ga-rich regions in the alloy. With regard to the thermodynamics of the process, we have used several models from the literature for the calculation of the critical temperatures of spinodal decomposition. This analysis shows that N has a higher tendency to phase separation than In, and that the introduction of nitrogen into the ternary alloy GaInAs can also stimulate the composition fluctuations of indium in the alloy. Regarding the kinetics of the process of phase separation, we have calculated the energy of activation for surface diffusion in the alloy. The results suggest that the diffusion of indium controls the process of formation of phase separation.

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Authors and Affiliations

  1. Departamento de Ciencia de los Materiales e I. M. y Q. I, Universidad de Cadiz, Apdo. 40, 11510, Puerto Real Cadiz, Spain

    M. Herrera & D. Gonzalez

  2. Department of Electronic and Electric Engineering, University of Sheffield, Mapping Street, Sheffield, S1 3JD, UK

    M. Hopkinson, H. Y. Liu & R. Garcia

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  1. M. Herrera
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  2. D. Gonzalez
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  3. M. Hopkinson
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Editors and Affiliations

  1. Physics Department, Solid-State Physics Division, Istanbul University, Vezneciler, Istanbul, 34134, Turkey

    Ayşe Erol (Faculty of Science) (Faculty of Science)

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Herrera, M., Gonzalez, D., Hopkinson, M., Liu, H.Y., Garcia, R. (2008). Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_8

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