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Experimental Studies of GaInNAs Conduction Band Structure

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Dilute III-V Nitride Semiconductors and Material Systems

Part of the book series: Materials Science ((SSMATERIALS,volume 105))

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In this chapter comprehensive review of the nitrogen-induced modifications of the electronic structure of GaInNAs alloys is carried out. We study behavior of conduction band effective mass as a function of Fermi energy, nitrogen content, and pressure. From analysis of the effective mass for different electron concentrations we have determined the energy dispersion relation for conduction band. We have investigated also optical absorption spectra on GaInNAs thin films and determined the absorption coefficients for E − and E + transitions. Spectroscopic ellipsometry measurements performed in a wide photon energy range 1.5–5.5 eV have been used to determine energy dependence of the dielectric function as well as energies of E 1, E 0, and E 2 critical point transitions. From the magneto absorption experiments we have obtained the values of the Zeeman splitting and the effective g* factors for the conduction and valence bands in GaInNAs alloys. Experiments have shown profound changes of the GaInNAs conduction band close to the Г point, conduction band splitting, and giant conduction band nonparabolicity. Much less effect have been observed for X and L minima as well as for valence band states.

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  1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warszawa, Poland

    C. Skierbiszewski

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  1. Physics Department, Solid-State Physics Division, Istanbul University, Vezneciler, Istanbul, 34134, Turkey

    Ayşe Erol (Faculty of Science) (Faculty of Science)

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Skierbiszewski, C. (2008). Experimental Studies of GaInNAs Conduction Band Structure. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_5

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