This chapter presents a comprehensive report on our work on dilute nitride vertical cavity semiconductor optical amplifiers. It includes a presentation of a theoretical analysis of the components and a summary of the experimental assessment of monolithic and fibre-based tunable devices operated in the continuous-wave regime. In particular, it is shown how some material parameters can be extracted from this device continuous-wave characterization or from gain-dynamics experiments. Current investigations on the extension of the operation towards the 1,550nm telecommunication band conclude this review.
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Calvez, S., Laurand, N. (2008). Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_20
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