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Dilute III-V Nitride Semiconductors and Material Systems pp 35–63Cite as

Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells

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Part of the book series: Materials Science ((SSMATERIALS,volume 105))

The impact of nitrogen ion density, present in the chamber during molecular beam epitaxial growth of the GaInNAs quantum wells, on their structural and optical properties is presented. The growth on two different substrate orientations, GaAs (100) and (111)B has been studied. The quantum well optical emission was found to be strongly increased when the nitrogen ion density was reduced during the growth, as determined by photoluminescence experiments. Cathodoluminescence mappings of quantum wells grown under different ion densities are compared, showing a stronger compositional modulation depth, and thus a higher structural disorder, when a higher ion density is present during the growth. This technique was also used to study the optical activity of defects found in GaAs (111)B samples. We applied deflecting magnetic fields to tune the amount of nitrogen ion density in the chamber during growth. Atomic force microscopy (AFM) measurements in similar epilayers showed that ions cause an important structural disorder of the layers, showing approximately twice the root mean square (RMS) roughness when the density of ions is not reduced by external magnetic fields. Additionally, transmission electron microscopy (TEM) measurements of buried GaInNAs quantum wells is presented, showing that lateral compositional fluctuations of In and N are suppressed when the quantum wells are protected from the ions. Finally, we have found that quantum wells exposed to higher ion densities during the growth show deeper localization levels and higher delocalization temperatures. These results clearly show that the structural properties such as the roughness and the compositional modulation, as well as the optical properties, such as the optical emission and localization energies are strongly dependent on the density of nitrogen ions present in the chamber during the growth of GaInNAs quantum wells. Rapid thermal annealing (RTA) experiments are also consistent with this hypothesis.

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Authors and Affiliations

  1. Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dept. Ingeniería Electrónica, Universidad Politécnica de Madrid ETSI Telecomunicación, 28040, Madrid, Spain

    J. Miguel-Sánchez, Á. Guzmán, A. Hierro & E. Muñoz

  2. Isofoton S.A., C/Severo Ochoa 50, 29590, Malaga, Spain

    J. Miguel-Sánchez

  3. Paul-Drude-Institur for Solid State Electronics, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    U. Jahn & A. Trampert

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  1. J. Miguel-Sánchez
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Editors and Affiliations

  1. Physics Department, Solid-State Physics Division, Istanbul University, Vezneciler, Istanbul, 34134, Turkey

    Ayşe Erol (Faculty of Science) (Faculty of Science)

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Miguel-Sánchez, J., Guzmán, Á., Hierro, A., Muñoz, E., Jahn, U., Trampert, A. (2008). Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_2

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