Basic technologies for realizing a monolithic optoelectronic-integrated circuits have been developed, in which light-emitting diodes and metal oxide semiconductor field effect transistors were merged in a single chip. Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. Point defects in these layers were reduced by reducing N ions and rapid thermal annealing. The carrier concentrations of the GaPN layer were controlled by doping S and Mg. InGaPN/GaPN double heterostructure light-emitting diodes were fabricated by integrating these technologies.
Light-emitting diodes and metal oxide semiconductor field effect transistors, which are elemental devices for optoelectronic-integrated circuits, were fabricated merged in a single chip with a Si layer and an InGaPN/GaPN double heterostructure layer lattice-matched to Si grown on a Si substrate. The developed processing flow was based on a conventional metal oxide semiconductor field effect transistor processing flow. All light-emitting diodes and metal oxide semiconductor field effect transistors operated normally. Light emission from the light-emitting diode was modulated by switching the metal oxide semiconductor field effect transistor. The growth and fabrication process technologies could be effective for the realization of monolithic optoelectronic-integrated circuits for massively parallel processing systems and optical interconnections.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
I. Hayashi, Jpn. J. Appl. Phys. 32, 266 (1993)
H.K. Choi, H.K. Mattia, G.W. Turner, B.Y. Tsaur, IEEE Electron Device Lett. 9, 512 (1998)
R.N. Ghosh, B. Griffing, J.M. Ballantyne, Appl. Phys. Lett. 48, 370 (1986)
Y. Inoue, K. Sugahara, S. Kusunoki, M. Nakaya, T. Nishimura, Y. Horiba, Y. Akasaka, H. Nakata, IEEE Electron Device Lett. 7, 327 (1986)
Y. Furukawa, H. Yonezu, K. Ojima, K. Samonji, Y. Fujimoto, K. Momose, Y. Aiki, Jpn. J. Appl. Phys. 41, (2002)
Y. Fujimoto, H. Yonezu, A. Utsumi, K. Momose, Y. Furukawa, Appl. Phys. Lett. 79, 1306 (2001)
K. Momose, H. Yonezu, Y. Fujimoto, Y. Furukawa, Y. Motomura, K. Aiki, Appl. Phys. Lett. 79, 4151 (2001)
H.P. Xin, R.J. Welty, C.W. Tu, IEEE Photonics Technol. Lett. 12, 960 (2000)
S.Y. Moon, H. Yonezu, Y. Furukawa, S.M. Kim, Y. Morita, A. Wakahara, Jpn. J. Appl. Phys. 44, 1752 (2005)
H. Yonezu, Semicond. Sci. Technol. 17, 762 (2002)
H. Yonezu, Y. Furukawa, H. Abe, Y. Yoshikawa, S.Y. Moon, A. Utsumi, Y. Yoshizumi, A. Wakahara, M. Ohtani, Opt. Mater. 27, 799 (2005)
Y. Furukawa, H. Yonezu, Y. Morisaki, S.Y. Moon, S. Ishiji, A. Wakahara, Jpn. J. Appl. Phys. 45, L290 (2006)
H. Yonezu, in Dilute Nitride Semiconductors, ed. by M. Henini. (Elsevier, Oxford, 2005) p. 451
M. Kawabe, T. Ueda, Jpn. J. Appl. Phys. 26, L944 (1987)
W.A. Harrison, E.A. Kraut, J.R. Waldrop, R.W. Grant, Phys. Rev. B18 4402 (1978)
H. Kroemer, J. Cryst. Growth 81, 193 (1987)
Y. Takagi, H. Yonezu, K. Samonji, T. Tuji, N. Ohshima, J. Cryst. Growth 187, 42 (1998)
N. Momose, H. Yonezu, Y. Fujimoto, K. Ojima, Y. Furukawa, A. Utsumi, K. Aiki, Jpn. J. Appl. Phys. 41, 7301 (2002)
M. Tamura, A. Hashimoto, N. Sugiyama, J. Appl. Phys. 70, 4770 (1991)
N. Hayafuji, N. Miyashita, T. Nishimura, K. Kadoiwa, H. Kumabe, T. Murotani, Jpn. J. Appl. Phys. 29, 2371 (1990)
M. Kondow, K. Uomi, K. Hosomi, T. Mozume, Jpn. J. Appl. Phys. 33, L1056 (1994)
M. Kondow, K. Uomi, T. Kitatani, S. Watahiki , Y. Yazawa, J. Cryst. Growth 164, 175 (1996)
W.G. Bi, C.W. Tu, Appl. Phys. Lett. 69, 3710 (1996)
J.F. Geisz, D.J. Freidman, Semicond. Sci. Technol. 17, 769 (2002)
T. Nishioka, Y. Itoh, A. Yamamoto, M. Yamaguchi, Appl. Phys. Lett. 51, 1928 (1987)
K. Nozawa, Y. Horikoshi, Jpn. J. Appl. Phys. 29, L540 (1990)
H.P. Xin, C.W. Tu, Y. Zhang, A. Mascarenhas, Appl. Phys. Lett. 76, 1267 (2000)
L. Bellaiche, S.H. Wei, A. Zunger, Appl. Phys. Lett. 70, 3558 (1977)
I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
H.P. Xin, C.W. Tu, Appl. Phys. Lett. 77, 2180 (2000)
K. Momose, H. Yonezu, Y. Furukawa, A. Utsumi, Y. Yoshizumi, S. Shinohara, J. Cryst. Growth 251, 443 (2003)
A. Utsumi, Y. Furukawa, H. Yonezu, Y. Yoshizumi, Y. Morita, A. Wakahara, Phys. Stat. Sol. A 202, 758 (2005)
A. Utsumi, H. Yonezu, Y. Furukawa, K. Momose, K. Kuroki, Phys. Stat. Sol. C 2741 (2003)
Y. Furukawa, H. Yonezu, A. Wakahara, Y. Yoshizumi, Y. Morita, A. Sato Appl. Phys. Lett. 88, 142109 (2006)
I.A. Buyanova, G.Y. Rudko, W.M. Chen, H.P. Xin, C.W. Tu, Appl. Phys. Lett. 80, 1740 (2002)
S.M. Kim, Y. Furukawa, H. Yonezu, K. Umeno, A. Wakahara, Jpn. J. Appl. Phys. 44, 8309 (2005)
S.M. Kim, Y. Furukawa, H. Yonezu, K. Umeno, A. Wakahara, J. Cryst. Growth 293, 359 (2006)
W. Li, M. Pessa, J. Likonen, Appl. Phys. Lett. 78, 2864 (2001)
N.Q. Thinh, I.P. Vorona, I.A. Buyanova, W.M. Chen, S. Limpijumnong, S.B. Zhang, Y.G. Hong, H.P. Xin, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, H. Yonezu, Phys. Rev. B, 71, 125209 (2005)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Yonezu, H. (2008). Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_16
Download citation
DOI: https://doi.org/10.1007/978-3-540-74529-7_16
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-74528-0
Online ISBN: 978-3-540-74529-7
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)