Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates

Multiquantum well heterostructures in the GaInNAsP/GaP material system were grown pseudomorphically strained on GaP substrates. This class of dilute nitride material system has a tremendous application potential in silicon photonics, as the novel material system is shown to have a direct band structure and as it can be grown without the formation of extended defects on GaP and hence on silicon substrates.

This chapter summarizes our present understanding of metalorganic vapor phase epitaxial growth as well as of structural characteristics of this class of metastable material systems. We will discuss the optical properties as well as give an estimate on the modification of the band structure of the host material altering the composition. The proof of concept will be demonstrated at the end of the chapter, where electrical injection lasing for this material system will be shown at low and room temperatures.