Alloying of nitrogen with conventional III–V compounds has recently attracted substantial research efforts ignited by unusual fundamental physical properties of the formed dilute nitride materials as well as their great potential for various applications in optoelectronics and photonics. Among the newest members of the dilute nitrides family are Ga0.5In0.5N x P1−x alloys lattice matched to GaAs. They have recently been suggested as promising materials for GaInP/GaAs-based heterojunction bipolar transistors, e.g., in blocked hole heterojunction bipolar transistors with a reduced offset and knee voltages. In this chapter we will review our present knowledge on the basic electronic and also material-related properties of GaInNP alloys. Issues to be addressed include: modeling of electronic structure of GaInNP, effects of nitrogen on band alignment at the GaInNP/GaAs interface, origin of radiative recombination in the alloys.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
For a review see e.g., I.A. Buyanova, W.M. Chen, B. Monemar, MRS Internet J. Nitride Semicond. Res. 6, 2 (2001)
I.A. Buyanova, W.M. Chen (eds.), Physics and Applications of Dilute Nitrides (Taylor & Francis, New York, 2004)
R.J. Welty, Y.G. Hong, H.P. Xin, K. Mochizuki, C.W. Tu, P.M. Asbeck, in Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices, Piscataway, NJ, 2000, pp. 33–40
C.W. Tu, J. Phys: Condens. Matter. 13, 7169 (2001)
I.A. Buyanova, W.M. Chen, G. Pozina, J.P. Bergman, B. Monemar, H.P. Xin, C.W. Tu, Appl. Phys. Lett. 75, 501 (1999)
R.A. Mair, J.Y. Lin, H.X. Jiang, E.D. Jones, A.A. Allerman, S.R. Kurtz, Appl. Phys. Lett. 76, 188 (2000)
L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, C. Vannuffel, A. Million, A. Chenevas-Paule, Appl. Phys. Lett. 76, 2241 (2000)
Y.G. Hong, A. Nishikawa, C.W. Tu, Appl. Phys. Lett. 83, 5446 (2003)
M. Izadifard, J.P. Bergman, W.M. Chen, I.A. Buyanova, Y.G. Hong, C.W. Tu, Appl. Phys. Lett. 88, 011919 (2006)
M.C. DeLong, W.D. Ohlsen, I. Viohl, P.C. Taylor, J.M. Olson, J. Appl. Phys. 70, 2780 (1991)
M.C. DeLong, P.C. Taylor, J.M. Olson, Appl. Phys. Lett. 57, 520 (1990)
Y.K. Su, C.H. Wu, S.H. Hsu, S.J. Chang, W.C. Chen, Y.S. Huang, H.P. Hsu (2004) Appl. Phys. Lett. 84, 1299
K.I. Lin, J.Y. Lee, T.S. Wang, S.H. Hsu, J.S. Hwang, Y.C. Hong, C.W. Tu, Appl. Phys. Lett. 86, 211914 (2005)
Y.K. Su, C.H. Wu, Y.S. Huang, H.P. Hsu, W.C. Chen, S.H. Hsu, S.J. Chang, J. Cryst. Growth 264, 357 (2004)
I.A. Buyanova, M. Izadifard, W.M. Chen, Y.G. Hong, C.W. Tu, Appl. Phys. Lett. 88, 031907 (2006)
W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Griedman, J.M. Olson, S.R. Kurtz, Phys. Rev. Lett. 82, 1222 (1999)
W. Walukiewicz, W. Shan, J. Wu, K.M. Yu, in Physics and Applications of Dilute Nitrides, ed. by I.A. Buyanova, W.M. Chen (Taylor & Francis, New York, 2004), pp. 23–64
P. Merle, D. Auvergne, D. Mathieu, J. Chevallier, Phys. Rev. B 15, 2032 (1977)
H.M. Macksey, N. Holonyak Jr., R.D. Dupuis, J.C. Campbell, G.W. Zack, J. Appl. Phys. 44, 1333 (1973)
I. Suemune, K. Uesugi, W. Walukiewicz, Appl. Phys. Lett. 77, 3021 (2000)
A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, A. Forchel, Phys. Rev. B 63, 195320 (2001)
I.A. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W.M. Chen, H.P. Xin, Y.G. Hong, C.W. Tu, Phys. Rev. B 70, 085209 (2004)
P.J. Klar, H. Gruning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P.M.A Vicente, J. Camassel, Appl. Phys. Lett. 76, 3439 (2000)
K. Kim, A. Zunger, Phys. Rev. Lett. 86, 2609 (2001)
Y.G. Hong, R. Andre, C.W. Tu, J. Vac. Sci. Technol. B 19, 1413 (2001)
J.S. Hwang, K.I. Lin, H.C. Lin, S.H. Hsu, K.C. Chen, Y.T. Lu, Y.G. Hong, C.W. Tu, Appl. Phys. Lett. 86, 061103 (2005)
M. Izadifard, T. Mtchedlidze, I. Vorona, W.M. Chen, I.A. Buyanova, Y.G. Hong, C.W. Tu, Appl. Phys. Lett. 86, 261904 (2005)
M. Izadifard, J.P. Bergman, W.M. Chen, I.A. Buyanova, Y.G. Hong, C.W. Tu, J. Appl. Phys. 99, 073515 (2006)
G.G. Zegrya, V.A. Kharchenko, Sov. Phys. JETP 74, 173 (1992)
W. Seidel, A. Titkov, J.P. Andre, P. Voisin, M. Voos, Phys. Rev. Lett. 73, 2356 (1994)
R. Hellmann, A. Euteneuer, S.G. Hense, J. Feldmann, P. Thomas, E.O. Göbel, D.R. Yakovlev, A. Wagg, G. Landwehr, Phys. Rev. B 51, 18053 (1995)
J. Zeman, G. Martinez, P.Y. Yu, K. Uchida, Phys. Rev. B 55, R13428 (1997)
F.A.J.M. Driessen, Appl. Phys. Lett. 67, 2813 (1995)
H.M. Cheong, B. Fluegel, M.C. Hanna, A. Mascarenhas, Phys. Rev. B 58, R4254 (1998)
Z.P. Su, K.L. Teo, P.Y. Yu, K. Uchida, Solid State Commun. 99, 933 (1996)
Y.H. Cho, D.S. Kim, B.D. Choe, H. Lim, J.I. Lee, D. Kim, Phys. Rev. B 56, R4375 (1997)
J. Zeman, G. Martinez, P.Y. Yu, K. Uchida, Phys. Rev. B 55, R13428 (1997)
I.A. Buyanova, W.M. Chen, in Physics and Applications of Dilute Nitrides, ed. by I.A. Buyanova, W.M. Chen (Taylor & Francis, New York, 2004), pp. 255–280
M. Godlewski, W.M. Chen, B. Monemar, Crit. Rev. Solid State Mater. Sci. 19, 241 (1994)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Buyanova, I.A., Chen, W.M. (2008). Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_12
Download citation
DOI: https://doi.org/10.1007/978-3-540-74529-7_12
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-74528-0
Online ISBN: 978-3-540-74529-7
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)