Abstract
This paper presents new page replacement algorithms for NAND flash memory, called CFLRU/C, CFLRU/E, and DL-CFLRU/E. The algorithms aim at reducing the number of erase operations and improving the wear-leveling degree of flash memory. In the CFLRU/C and CFLRU/E algorithms, the least recently used clean page is selected as the victim within the pre-specified window of the LRU list. If there is no clean page within the window, CFLRU/C evicts the dirty page with the lowest access frequency while CFLRU/E evicts the dirty page with the lowest block erase count. DL-CFLRU/E maintains two LRU lists called the clean page list and the dirty page list, and first evicts a page from the clean page list. If there is no clean page in the clean page list, DL-CFLRU/E evicts the dirty page with the lowest block erase count within the window of the dirty page list. Experiments through simulation studies show that the proposed algorithms reduce the number of erase operations and improve the wear-leveling degree of flash memory compared to LRU and CFLRU.
This work was supported in part by the Samsung Electronics, and by the Korea Research Foundation Grant funded by Korean Government(MOEHRD) (R08-2004-000-10391-0).
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© 2007 Springer-Verlag Berlin Heidelberg
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Yoo, YS., Lee, H., Ryu, Y., Bahn, H. (2007). Page Replacement Algorithms for NAND Flash Memory Storages. In: Gervasi, O., Gavrilova, M.L. (eds) Computational Science and Its Applications – ICCSA 2007. ICCSA 2007. Lecture Notes in Computer Science, vol 4705. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74472-6_16
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DOI: https://doi.org/10.1007/978-3-540-74472-6_16
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