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Applied Scanning Probe Methods X pp 63–103Cite as

Carrier Transport in Advanced Semiconductor Materials

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Part of the book series: Nano Science and Technolgy ((NANO))

Abstract

In this chapter, the main scanning probe microscopy based methods to measure transport properties in advanced semiconductor materials are presented. The two major approaches to determine the majority carrier distribution, i. e., scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM), are illustrated, starting from their basic principles. The imaging capabilities for critical structures and the quantification of SCM and SSRM raw data to carrier concentration profiles are described and discussed. The determination of drift mobility in semiconductors by combined application of SCM and SSRM is illustrated considering quantum wells. The carrier transport through metal–semiconductor barriers by conductive atomic forcemicroscopy (CAFM) is reviewed. Finally, the charge transport in dielectrics is studied locally by CAFM, and a method for the direct determination of dielectric breakdown and Weibull statistics is illustrated.

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Authors and Affiliations

  1. CNR-IMM, Stradale Primosole 50, 95121, Catania, Italy

    Filippo Giannazzo, Patrick Fiorenza & Vito Raineri

Authors
  1. Filippo Giannazzo
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  2. Patrick Fiorenza
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  3. Vito Raineri
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Editor information

Editors and Affiliations

  1. Nanotribology Laboratory for Information Storage and MEMS/NEMS (NLIM), The Ohio State University, 201W. 19th Avenue, 43210-1142, Columbus, Ohio , USA

    Bharat Bhushan

  2. Advanced Institute of Science & Technology, School of Materials Science, 923-1292, Ishikawa, Japan

    Masahiko Tomitori

  3. Institute of Physics, FB 16, University of Münster, Wilhelm-Klemm-Str. 10, 48149, Münster, Germany

    Harald Fuchs

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Giannazzo, F., Fiorenza, P., Raineri, V. (2008). Carrier Transport in Advanced Semiconductor Materials. In: Bhushan, B., Tomitori, M., Fuchs, H. (eds) Applied Scanning Probe Methods X. Nano Science and Technolgy. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74085-8_2

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