Abstract
Semiconductor light detectors are the part of vision and image processing systems. Pulse amplitude distribution of silicon avalanche photodiodes with photosensitive surface 7 mm2 is investigated using measurement computer system. Amplitude characteristics in the photon-counting mode are studied depending on the supplied overvoltage, laser intensity and photosensitive surface area. It is shown that changing the supplied overvoltage and photosensitive surface area causes increase / decrease of the peaks number on pulse-amplitude distribution curve due to several microplasmas in the region of space charge.
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References
J. Fraden “Handbook of modern sensors: physics, designs, and applications” Springer-Verlag, New York, 2004.
I. R. Gulakov, V. B. Zalesskii, A. O. Zenevich, T. R. Leonova, Instruments and experimental techniques. 50,2 (2007) 249.
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Baranouski, A., Zenevich, A., Novikov, E. (2007). Silicon quantum detectors with large photosensitive surface. In: Jabłoński, R., Turkowski, M., Szewczyk, R. (eds) Recent Advances in Mechatronics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-73956-2_133
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DOI: https://doi.org/10.1007/978-3-540-73956-2_133
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-73955-5
Online ISBN: 978-3-540-73956-2
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