As the device size shrinks, and the operating voltage is necessarily bounded from below, the electric fields inside the device must grow. In this chapter, we will address high-field transport phenomena in a systematic manner, and as a first step we study the general properties of free field-dependent Green functions which form the basic building blocks of the subsequent theory. In order to gain insight of how the general approach works, we next study a specific model of dynamical disorder, for which an analytic and exact theory can be developed. Finally, we give an extensive treatment of high-field transport in semiconductors, focusing in particular to the modifications one must make to the semiclassical Boltzmann equation.
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© 2008 Springer-Verlag Berlin Heidelberg
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(2008). Field-Dependent Green Functions. In: Quantum Kinetics in Transport and Optics of Semiconductors. Solid-State Sciences, vol 123. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-73564-9_10
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DOI: https://doi.org/10.1007/978-3-540-73564-9_10
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-73561-8
Online ISBN: 978-3-540-73564-9
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