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Magnetic Tunnel Junctions

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Book cover Magnetic Heterostructures

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 227))

abstract

In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically. We will cover Al-O and MgO based junctions and present highly spin-polarized electrode materials such as Heusler alloys. Furthermore, we will give a short overview on applications such as read heads in hard disk drives, storage cells in MRAMs, field programmable logic circuits and biochips. Finally, we will discuss the currently growing field of current induced magnetization switching.

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Authors and Affiliations

  1. Thin Films and Physics of Nanostructures, Department of Physics, Bielefeld University, Bielefeld, Germany

    Günter Reiss, Jan Schmalhorst, Andre Thomas & Andreas Hütten

  2. National Institute of Advanced Industrial Science and Technology (AIST), Nanoelectronics Research Institute, Tsukuba, Japan

    Shinji Yuasa

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  1. Günter Reiss
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  4. Andreas Hütten
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Editors and Affiliations

  1. Institut für Experimentalphysik, Ruhr-Universität Bochum Fakultät für Physik und Astronomie, D 44780 Bochum, Germany

    Hartmut Zabel

  2. Material Science Division, Argonne National Laboratory, 9700 South Cass Ave., Argonne, IL 60439, USA

    Samuel D. Bader

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Reiss, G., Schmalhorst, J., Thomas, A., Hütten, A., Yuasa, S. (2008). Magnetic Tunnel Junctions. In: Zabel, H., Bader, S.D. (eds) Magnetic Heterostructures. Springer Tracts in Modern Physics, vol 227. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-73462-8_6

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