Summary
A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A review on some possible treatments to passivate the Ge surface is discussed. Another important aspect is the activation of p- and n-type dopants to form the active areas in devices. Finally, Ge deep submicron n- and p-FET devices fabricated with this technique on germanium-on-insulator substrates, yield promising device characteristics, showing the feasibility of these substrates.
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Meuris, M. et al. (2007). Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates. In: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M. (eds) Advanced Gate Stacks for High-Mobility Semiconductors. Advanced Microelectronics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71491-0_15
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DOI: https://doi.org/10.1007/978-3-540-71491-0_15
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