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Domain Charge Structure of Amorphous Semiconductor

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Light-Driven Alignment

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 141))

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Abstract

We have seen that a new quality in the system emerges when one curve is touched to another, as shown in Figs. 2.1 and 2.5. It means that light-driven self-organization is indeed a threshold effect according to the third statement of Prigogine. Light intensity is a governing parameter: self-organization appears at

$$ \mu = I\sigma _0 /\gamma \approx 1. $$

.

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© 2009 Springer-Verlag Berlin Heidelberg

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(2009). Domain Charge Structure of Amorphous Semiconductor. In: Light-Driven Alignment. Springer Series in Optical Sciences, vol 141. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-69888-3_3

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