Ultrafast Soft X-ray Absorption Spectroscopy in Si with 20fs Resolution Using HH Radiation

Seres, E.; Spielmann, Ch.

doi:10.1007/978-3-540-68781-8_4

E. Seres^8,9 &
Ch. Spielmann⁸

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 88))

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Abstract

We followed the modification of the x-ray absorption spectrum above the L-edge of Silicon after excitation with intense laser pulses and gathered information about the carrier and structural dynamics with sub-20 fs resolution.

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Authors and Affiliations

Physikalisches Institut EP1, University of Würzburg, Am Hubland, 97074, Würzburg, Germany
E. Seres & Ch. Spielmann
Institut für Photonik, Vienna University of Technology, Gusshausstrasse 27/387, 1040, Vienna, Austria
E. Seres

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E. Seres
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Ch. Spielmann
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Editors and Affiliations

Steacie Institute for Molecular Sciences, National Research Council Canada, 100 Sussex Drive, Rm 2063, Ottawa, ON, K1A 0R6, Canada
Paul Corkum
Department of Chemistry & Biochemistry 215 UCB, University of Colorado, Boulder, Boulder, CO, 80309-0215, USA
David M. Jonas
Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
R. J. Dwayne. Miller
School of Electrical & Computer Engineering, Purdue University, 1285 Elec. Eng. Bldg., West Lafayette, IN, 47907-1285, USA
Andrew M. Weiner

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Seres, E., Spielmann, C. (2007). Ultrafast Soft X-ray Absorption Spectroscopy in Si with 20fs Resolution Using HH Radiation. In: Corkum, P., Jonas, D.M., Miller, R.J.D., Weiner, A.M. (eds) Ultrafast Phenomena XV. Springer Series in Chemical Physics, vol 88. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-68781-8_4

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DOI: https://doi.org/10.1007/978-3-540-68781-8_4
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-68779-5
Online ISBN: 978-3-540-68781-8
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