Microelectromechanical systems (MEMS) were born as a new technological discipline during the 1980s (for an introductory textbook, see, for instance [1]). The idea of the pioneers was to enlarge capabilities of integrated circuits based on silicon beyond pure electronics by adding mechanical elements, which were made of silicon and further materials of semiconductor technology. The addition of mechanics extended the application range of silicon technology to motion sensors, pressure and force sensors, small actuators, and a number of acoustic and ultrasonic devices, most importantly resonators for signal treatment. In order to profit from the symbiosis with electronics, those mechanical elements should, of course, be controlled by electronic signals. Evidently, this new silicon technology makes sense only for small, miniaturized devices. The technical advantage comes from the fact that powerful thin-film deposition and patterning techniques as used for semiconductor fabrication allow unprecedented precision of mechanics in the nano- to micrometer range. As a large number of devices are produced in parallel on the same wafer (batch processing), the cost level is acceptable in spite of expensive fabrication tools, at least at high production volumes. Concerning processing, the chemistry of silicon turned out to be very helpful: high etching rates of anisotropic wet etching in a base solution (as, e.g., KOH) and anisotropic deep silicon etching in a plasma reactor are crucial issues in efficiently tailoring silicon. Over the last 20 years, MEMS technology has became a proven and mature technology with many applications. While “MEMS” is still taken as a standing brand name for the field, the actual MEMS field has become much wider than stipulated by the notion of electromechanics, including thermal, optical, magnetic, chemical, biochemical, and further functional properties. Also, the main material of the device is not necessarily silicon, but may be glass or plastics, especially for biomedical applications.
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References
N. Malouf, Artech House 265 (2000)
K. Uozumi, K. Ohsone, R.M. White, Appl. Phys. Lett. 43, 917–919 (1983)
H.T. Soh, I. Ladabaum, A. Atalar, C.F. Quate, B.T. Khuri-Yakub, Appl. Phys. Lett. 69, 3674–3676 (1996)
A.S. Ergun, G.G. Yaralioglu, B.T. Khuri-Yakub, J. Aerospace Eng. 16, 76–84 (2003)
V.P. Jaecklin, C. Linder, N.F. de Rooij, J.-M. Moret, Sensors Actuators A 39, 83–89 (1993)
P. Cheung, R. Horowitz, R.T. Howe, ASME Micormech. Sens. Actuators Syst. 32, 269–278 (1992)
E. Quandt, A. Ludwig, Sens. Actuators 81, 275–280 (2000)
J.F. Scott, C.A. Paz de Araujo, Science 246, 1400–1405 (1989)
O. Auciello, J.F. Scott, R. Ramesh, Phys. Today 51, 22–27 (1998)
H. Raeder, F. Tyholdt, W. Booij, F. Calame, N.P. Ostbo, R. Bredesen, K. Prume, G. Rijnders, P. Muralt, J. Electroceram. 19, 357–362 (2007)
A. Infortuna, P. Murait, M. Cantoni, N. Setter, J. Appl. Phys. 100(10), 104110 (2006)
A. Infortuna, P. Muralt, M. Cantoni, A. Tagantsev, N. Setter, J. Eur. Cer. Soc. 24, 1573–1577 (2004)
R. Bruchhaus, D. Pitzer, R. Primig, W. Wersing, Y. Xu, Integr. Ferr. 14, 141–149 (1997)
S. Hiboux, P. Murait, Integr. Ferr. 36, 83–92 (2001)
Y.B. Jeon, R. Sood, J.-H. Jeong, S.-G. Kim, Sens. Actuators A 122, 16–22 (2005)
E. Hong, S. Trolier-McKinstry, R. Smith, S.V. Krishnaswamy, IEEE Trans. UFFC 53, 697–706 (2006)
P. Murait, J. Am.Ceram. Soc. 91, 1385–1396 (2008)
P. Murait, Integr. Ferr. 17, 297–307 (1997)
A.L. Kholkin, C. Wüthrich, D.V. Taylor, N. Setter, Rev. Sci. Instr. 67, 1935–1941 (1996)
M.-A. Dubois, P. Murait, Sens. Actuators A 77, 106–112 (1999)
J.F. Shepard, P.J. Moses, S. Trolier-McKinstry, Sens. Actuators A 71, 133–138 (1998)
K. Prume, P. Muralt, F. Calame, T. Schmitz-Kempen, S. Tiedke, IEEE Trans. UFFC 54, 8–14 (2007)
Y. Nemirovsky, A. Nemirovsky, P. Murait, N. Setter, Sens. Actuators A 56, 239–249 (1996)
A. Barzegar, D. Damjanovic, N. Ledermann, P. Muralt, J. Appl. Phys. 93, 4756–4760 (2003)
Q. Meng, M. Mehregany, K. Deng, J. Micromech. Microeng. 3, 18–23 (1993)
P. Luginbuhl, G.-A. Racine, P. Lerch, B. Romanowicz, K.G. Brooks, N.F.D. Rooij, P. Renaud, N. Setter, Sens. Actuators A 53, 530–535 (1996)
T. Fabula, H.-J. Wagner, B. Schmitt, S. Büttgenbach, Sens. Actuators A 41–42, 375–380 (1994)
G. Bu, D. Ciplys, M. Shur, L.J. Schowalter, S. Schujman, R. Gaska, Appl. Phys. Lett. 84, 4611–4613 (2004)
F. Martin, P. Murait, M.-A. Dubois, A. Pezous, J. Vac. Sci. Techn. A 22, 361–365 (2004)
A. Rodriguez-Navarro, W. Otano-Rivera, J.M. Garcia-Ruiz, R. Messier, J. Mater. Res. 12, 1850–1855 (1997)
M.-A. Dubois, P. Muralt, J. Appl. Phys. 89, 6389–6395 (2001)
K. Tsubouchi, K. Sugai, N. Mikoshiba. in IEEE Ultrasonics Symposium, 1981
T. Kamiya, Jpn. J. Appl. Phys. 8, 4421–4426 (1996)
T. Shiosaki, T. Yamamoto, T. Oda, A. Kawabata, Appl. Phys. Lett. 36, 643–645 (1980)
P. Murait, J. Antifakos, M. Cantoni, R. Lanz, F. Martin, in IEEE Ultrasonics Symposium 2005 (IEEE, Rotterdam, 2005)
C.A. Araujo, L.D. MacMillan, B.M. Melnick, J.D. Cuchiaro, J.F. Scott, Ferroelectrics 104, 241–256 (1990)
R.E. Jones, P. Zürcher, P. Chou, D.J. Taylor, Y.T. Lii, B. Jiang, P.D. Maniar, S.J. Gillespie, Microelectronic Eng. 29, 3–10 (1995)
P. Muralt, J. Micromech. Microeng. 10(2), 136–146 (2000)
C.P.d. Araujo, J.F. Scott, G.W. Taylor (eds.), in Ferroelectricity and Related Phenomena, ed. by G.W. Taylor, vol. 10 (Gordon and Breach, Amsterdam, 1996)
P. Muralt, IEEE Trans. Ultrason. Ferr. 47, 903–915 (2000)
S. Hiboux, P. Muralt, J. Eur. Cer. Soc. 24, 1593–1596 (2004)
P. Murait, T. Maeder, L. Sagalowicz, S. Hiboux, S. Scalese, D. Naumovic, R.G. Agostino, N. Xanthopoulos, H.J. Mathieu, L. Patthey, E.L. Bullock, J. Appl. Phys. 83(7), 3835–3841 (1998)
S. Bühlmann, P. Murait, S. VonAllmen, Appl. Phys. Lett. 84, 2614–2616 (2004)
S. Clemens, T. Schneller, A. van der Hart, F. Peter, R. Waser, Adv. Mater. 17, 1357–1361 (2005)
A. Seifert, N. Ledermann, S. Hiboux, P. Murait, Mater. Res. Soc. Symp. Proc. 596, 535–540 (2000)
N. Ledermann, P. Muralt, J. Baborowski, S. Gentil, K. Mukati, M. Cantoni, A. Seifert, N. Setter, Sens. Actuators A 105, 162–170 (2003)
F. Calame, P. Murait, Appl. Phys. Lett. 90, 062907 (2007)
M.-A. Dubois, P. Muralt, D.V. Taylor, S. Hiboux, Integr. Ferr. 22, 535–543 (1998)
F. Tyholdt, F. Calame, K. Prume, H. Raeder, P. Muralt, J. Electroceram. 17, 311–314 (2007)
I. Kanno, S. Fujii, T. Kamada, R. Takayama, Appl. Phys. Lett. 70, 1378–1380 (1997)
I. Kanno, Y. Yokoyama, H. Kotera, K. Wasa, Phys. Rev. B 69, 064103 (2004)
J.C. Nino, S. Trolier-McKinstry, J. Mater. Res. 19, 568–572 (2004)
T. Yoshimura, S. Trolier-McKinstry, J. Cryst. Growth 229, 445–449 (2001)
J.-P. Maria, J.F. Shepard, S. Trolier-McKinstry, T.R. Watkins, A.E. Payzant, Appl. Ceram. Technol. 2, 51–58 (2005)
S. Yokoyama, S. Okamoto, H. Funakubo, T. Iijima, K. Saito, H. Okino, T. Yamamoto, K. Nishida, T. Katoda, J. Sakai, J. Appl. Phys. 100, 054110 (2006)
Q.F. Zhou, Q.Q. Zhang, S. Trolier-McKinstry, J. Appl. Phys. 94, 3397–3402 (2003)
Q.Q. Zhang, Q.F. Zhou, S. Trolier-McKinstry, Appl. Phys. Lett. 80, 3370–3372 (2002)
N. Bassiri Gharb, S. Trolier-McKinstry, J. Appl. Phys. 97, 064106 (2005)
A. Kholkin, Ferroelectrics 238, 235–243 (2000)
F. Xu, S. Trolier-McKinstry, W. Ren, B.M. Xu, Z.L. Xie, K.J. Hemker, J. Appl. Phys. 89, 1336–1348 (2001)
N.A. Pertsev, V.G. Khukhar, H. Kohlstedt, R. Waser, Phys. Rev. B, 67, 054107 (2003)
M.J. Haun, Ferroelectrics 99, 45–54 (1989)
A. Kingon, P. Murait, N. Setter, R. Waser, in Ceramic Materials for Electronics, ed. by R.C. Buchanan (Mercel Dekker, New York, 2004)
K. Brinkman, Y. Wang, D. Su, A. Tagantsev, P. Murait, N. Setter, J. Appl. Phys. 102, 044110 (2007)
D.A. Berlincourt, C. Cmolik, H. Jaffe. in Proceedings of the IRE (Institute of Radio Engineers, New York, 1960)
S. Bühlmann, B. Dwir, J. Baborowski, P. Muralt, Appl. Phys. Lett. 80, 3195–3197 (2002)
Q.M. Zhang, H. Wang, N. Kim, L.E. Cross, J. Appl. Phys. 75, 454–459 (1994)
G. Robert, D. Damjanovic, N. Setter, A.V. Turik, J. Appl. Phys. 89, 5067–5074 (2000)
J.L. Jones, M. Hoffmann, J.E. Daniels, A.J. Studer, Appl. Phys. Lett. 89, 092901 (2006)
A.L. Roitburd, Phys. Stat. Sol. A 37, 329–339 (1976)
J.S. Speck, W. Pompe, J. Appl. Phys. 76, 466–476 (1994)
J.S. Speck, A. Seifert, W. Pompe, R. Ramesh, J. Appl. Phys. 76, 477–483 (1994)
G. Arlt, N.A. Pertsev, J. Appl. Phys. 70, 2283–2289 (1991)
N.A. Pertsev, A.Y. Emelyanov, Appl. Phys. Lett. 71, 3646–3648 (1997)
N.A. Pertsev, A.Yu. Emelyanov, Phys. Solid State 39, 109–114 (1997)
M. Kohli, P. Muralt, N. Setter, Appl. Phys. Lett. 72, 3217–3219 (1998)
M. Aplanalp, L.M. Eng, P. Günter, Appl. Phys. A Mater. Sci. Process 66, S231 (1998)
A. Gruverman, H. Tokumoto, A.S. Prakash, S. Aggarwal, B. Yang, M. Wuttig, R. Ramesh, O. Auciello, T. Venkatesan, Appl. Phys. Lett. 71, 3492–3494 (1997)
E.L. Colla, S. Hong, D.V. Taylor, A.K. Tagantsev, N. Setter, Appl. Phys. Lett. 72, 2763–2765 (1998)
V. Nagarajan, A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao, L. Chen, J. Melngailis, O. Auciello, R. Ramesh, Nat. Mater. 2, 43–47 (2002)
G. Le Rhun, I. Vrejoiu, M. Alexe, Appl. Phys. Lett. 90, 012908 (2007)
Y.V. Meyer, C.M. Collet, J. Baborowski, P. Murait, Smart Mater. Struct. 16, 128–134 (2007)
K.H. Hwang, Y.J. Song, S.G. Kim, Jpn. J. Appl. Phys. Part 1 37, 7074–7077 (1999)
N. Ledermann, P. Muralt, J. Baborowski, M. Forster, J.-P. Pellaux, J. Micromech. Microeng. Syst. 14, 1650–1658 (2004)
G. Percin, T.S. Lundgren, B.T. Khuri-Yakub, Appl. Phys. Lett. 73, 2375–2377 (1998)
G. Percin, B.T. Khuri-Yakub, Rev. Sci. Instr. 73, 2193–2196 (2002)
B. Belgacem, F. Calame, P. Muralt, J. Electroceram. 17, 369–373 (2007)
P. Muralt, N. Ledermann, J. Baborowski, A. Barzegar, S. Gentil, B. Belgacem, S. Petitgrand, A. Bosseboeuf, N. Setter, IEEE Trans. UFFC 52, 2276–2288 (2005)
A. Ballato, J.G. Gualtieri, IEEE Trans. UFFC 41, 834–844 (1994)
J.G. Gualtieri, A. Ballato, IEEE Trans. UFFC 41, 53–59 (1994)
K.M. Lakin, K.T. McCarron, R.E. Rose, in IEEE Ultrasonics Symposium (IEEE, Seattle, 1995)
R.C. Ruby, P. Bradley, Y. Oshmyansky, A. Chien, J.D. Larson. in IEEE Ultrasonics Symposium (IEEE, Atlanta, 2001)
R. Aigner, J. Kaitila, J. Ellia, L. Elbrecht, W. Nessler, M. Handmann, T. Herzog, and S. Marksteiner. in IMS’2003 (Philadelphia, 2003)
H. Heinze, E. Schmidhammer, C. Diekmann, and T. Metzger, in IEEE Ultrasonics Symposium (IEEE, Montreal, 2004)
M.-A. Dubois, J.-F. Carpentier, P. Vincent, C. Billard, G. Parat, C. Muller, P. Ancey, P. Conti, Monolithic above-IC resonators technology for integrated architectures in mobile and wireless communication. IEEE J. Solid-State Circuits 41, 7–16 (2006)
R. Lanz, P. Murait, IEEE Trans. UFFC 52, 936–946 (2005)
E. Gizeli, in Biomolecular Sensors, ed. by E. Gizelli, C.R. Lowe (Taylor & Francis, London, 2002)
G.L. Harding, J. Du, Smart Mater. Struct. 6, 716–720 (1997)
R. Gabl, H.-D. Feucht, H. Zeininger, G. Eckstein, M. Schreiter, R. Primig, D. Pitzer, W. Wersing, Biosens. Bioelectron. 19, 615–620 (2004)
M. Benetti, D. Cannata, F. DiPietrantionio, Foglietti, Verana, Appl. Phys. Lett. 87, 173504 (2005)
S. Rey-Mermet, R. Lanz, P. Muralt, Sens. Actuators B 114, 681–686 (2006)
J. Weber, W.M. Albers, J. Tuppurainen, M. Link, R. Gabl, W. Wersing, M. Schreiter, Sens. Actuators A 128, 84–88 (2006)
J. Bjurstrom, G. Wingqvist, I. Katardjiev, IEEE Trans. UFFC 11, 2095–2100 (2006)
G. Wingqvist, J. Bjurstrom, L. Liljeholm, V. Yantchev, I. Katardjiev, Sens. Actuators B 123, 466–473 (2007)
T. Yanagitani, M. Kiuchi, M. Matsukawa, Y. Watanabe, J. Appl. Phys. 102, 024110 (2007)
E. Fujii, R. Takayama, K. Nomura, A. Murata, T. Hirasawa, A. Tomozawa, S. Fujii, T. Kamada, and H. Torii, IEEE Trans. UFFC 54, 2431–2438 (2007)
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Muralt, P. (2008). Piezoelectric Films for Innovations in the Field of MEMS and Biosensors. In: Piezoelectricity. Springer Series in Materials Science, vol 114. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-68683-5_15
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