Abstract
The imaging of crystal surfaces at high resolution using electron beams has been a long-standing challenge for physicists. Techniques for this purpose promise wide application, from research into the kinetics and atomic mechanisms of crystal growth to studies of semiconductor interfaces and monolayer magnetism. Ideally, such a method should be capable of identifying atomic species, should provide real-time atomic resolution imaging over a wide range of temperatures, and should allow imaging of individual sub-surface layers. Currently, while no one technique can achieve all these goals, the following techniques come closest : secondary-electron scanning microscopy in ultrahigh vacuum (UHV SEM) [8.1], scanning Auger microscopy (SAM) [8.1], scanning tunnelling microscopy (STM) [8.2], sub-surface backscattered channelling imaging [8.3,4], forbidden-reflection TEM lattice imaging in ultra-high vacuum (UHV HREM) [8.5] and the reflection electron microscopy (REM) technique reviewed in this chapter. (The field-ion microscope may also provide an even higher performance than these methods in certain specialised cases [8.2]). These electron beam techniques offer resolutions of about 1 nm for REM and SEM [8.1], 2 nm for SAM [8.2], and about 0.25 nm for STM and UHV HREM. The resolution of the low-energy electron microscopy (LEEM) technique [8.6] may also become competitive in the future if chromatic-aberration corrected designs can be implemented.
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Spence, J.C.H. (1995). Energy-Filtered Reflection Electron Microscopy. In: Reimer, L. (eds) Energy-Filtering Transmission Electron Microscopy. Springer Series in Optical Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-48995-5_8
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DOI: https://doi.org/10.1007/978-3-540-48995-5_8
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