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Study of the Induced Damage and of the Annealing Kinetics of Defects in Ion Implanted Silicon Using the Photothermal Reflectance Technique

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Photoacoustic and Photothermal Phenomena II

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 62))

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Abstract

Study of the annealing kinetics of defects in ion implanted silicon using the photothermal reflectance technique has been performed. The strong influence of the implant dose and of the annealing temperature on the measured signal indicates the sensitivity of this method to the presence of implant damage in the silicon layer. The activation energy of the recovery mechanism, found to be 0.15 eV, is consistent with the local reconstruction of the implanted layer.

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References

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Author information

Authors and Affiliations

  1. Photoacoustic and Photothermal Sciences Laboratory, Department of Mechanical Engineering and Ontario Laser and Lightwave Research Center, University of Toronto, Toronto, Ontario, M5S 1A4, Canada

    I. A. Vitkin, C. Christofides & A. Mandelis

Authors
  1. I. A. Vitkin
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  2. C. Christofides
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  3. A. Mandelis
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Editor information

Editors and Affiliations

  1. Materials Science Department and Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD, 20723-6099, USA

    John C. Murphy

  2. Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD, 20723-6099, USA

    Jane W. Maclachlan Spicer Ph. D.  & Leonard C. Aamodt Ph. D.  & 

  3. School of Engineering and Applied Science, Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08544-5263, USA

    Barrie S. H. Royce

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© 1990 Springer-Verlag Berlin Heidelberg

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Vitkin, I.A., Christofides, C., Mandelis, A. (1990). Study of the Induced Damage and of the Annealing Kinetics of Defects in Ion Implanted Silicon Using the Photothermal Reflectance Technique. In: Murphy, J.C., Spicer, J.W.M., Aamodt, L.C., Royce, B.S.H. (eds) Photoacoustic and Photothermal Phenomena II. Springer Series in Optical Sciences, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-46972-8_37

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  • DOI: https://doi.org/10.1007/978-3-540-46972-8_37

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-13795-6

  • Online ISBN: 978-3-540-46972-8

  • eBook Packages: Springer Book Archive

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