Abstract
Summary. The formation mechanisms, structure, luminescence characteristics and potential optoelectronic applications of (In)GaAs/(Al)GaAs pyramidal quantum dots (QDs) grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. These QDs self-form at the tip of etched inverted pyramids due to the interplay of growth rate anisotropy, strain, capillarity and entropy of mixing affects. As such, their position on the substrate can be perfectly determined via lithography in the pre-growth patterning step, and this without compromising their interface quality. Moreover, these dots grow connected to a system of low-dimensional barriers, particularly quantum wires (QWRs) and quantum wells (QWs), which can promote carrier collection and capture into the dots. Cathodoluminescence, photoluminescence and electroluminescence studies reveal efficient light emission from the dots with record low inhomogeneous broadening (well below 10meV). Moreover, the emission energy of the dots can be tuned by adjusting their composition, the growth conditions, and the pattern on the substrate. The emission spectra also reveal distinct and reproducible transitions from confined, neutral and multiple-charged, exciton states. Correlated photon spectroscopy was used to observe single photon emission and cascade emission of correlated photon pairs from different excitonic states confined at the dots and for studying the dynamics of exciton charging and recombination. Preferential carrier injection into a single pyramidal QD via a self-ordered connected QWR is also demonstrated.
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(2007). Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates. In: Lateral Aligment of Epitaxial Quantum Dots. Nano Science and Technolgy. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-46936-0_23
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DOI: https://doi.org/10.1007/978-3-540-46936-0_23
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