Abstract
Self-assembled GeSi (or Ge) islands on Si substrates have been extensively investigated not only because they represent simple model systems to understand the fundamental physics of heterostructure growth, but also because they represent promising candidates for devices compatible with sophisticated Si device integration technology [1]. On the Si substrate, GeSi or Ge initially grows in a layer-by-layer mode, and after a critical thickness is reached, islands are spontaneously formed to release misfit strain energy at the expense of an increase of surface energy. This so-called Stranski–Krastanow growth mode can occur during mismatched heterostructure growth. The growth of self-assembled GeSi or Ge islands depends on the growth process parameters [2–8], such as growth time (or deposited Ge amount), growth temperature, growth rate, and post-growth annealing. Theoretical studies of growth kinetics [9, 10] or energetics of island formation [11] came to the conclusion that a narrow island size distribution can be expected under critical growth conditions or for extremely long ripening times. In principle, taking into account the elastic interaction between neighboring islands, ordered islands can be realized [12, 13]. However, the self-assembled islands are in general randomly distributed in the growth plane due to the stochastic nucleation of the islands on a flat surface. In addition, the difference of the number density of the islands in different regions on the substrate also deteriorates the size homogeneity of the islands.
Keywords
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
O.G. Schmidt, K. Eberl, IEEE Trans. Electron. Devices 48, 1175 (2001)
A. Vailionis, B. Cho, G. Glass, P. Desjardins, D.G. Cahill, J.E. Greene, Phys. Rev. Lett. 85, 3672 (2000)
P. Sutter, P. Zahl, E. Sutter, Appl. Phys. Lett. 82, 3454 (2003)
F.M. Ross, R.M. Tromp, M.C. Reuter, Science 286, 1931 (1999)
Y. Zhang, M. Floyd, K.P. Driver, J. Drucker, P.A. Crozier, D.J. Smith, Appl. Phys. Lett. 80, 3623 (2003)
B. Liu, C.L. Berrie, T. Kitajima, J. Bright, S.R. Leone, J. Vac. Sci. Technol. B 20, 678 (2002)
T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, R.S. Williams, J. Appl. Phys. 85, 1159 (1999)
O.G. Schmidt, C. Lange, K. Eberl, Appl. Phys. Lett. 75, 1905 (1999)
Y. Chen, J. Washburn, Phys. Rev. Lett. 77, 4046 (1996)
D.E. Jesson, G. Chen, K.M. Chen, S.J. Pennycook, Phys. Rev. Lett. 80, 5156 (1998)
L.G. Wang, P. Kratzer, M. Scheffler, N. Moll, Phys. Rev. Lett. 82, 4042 (1999)
V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995)
F. Liu, A.H. Li, M.G. Lagally, Phys. Rev. Lett. 87, 12610306 (2001)
J. Tersoff, C. Teichert, M.G. Lagally, Phys. Rev. Lett. 76, 1675 (1996)
G. Capellini, M.D. Seta, C. Spinella, F. Evangelisti, Appl. Phys. Lett. 82, 1772 (2003)
S.Y. Shiryaev, F. Jensen, J.L. Hansen, J.W. Petersen, A.N. Larsen, Phys. Rev. Lett., 78, 503 (1997)
J. Zhu, K. Brunner, G. Abstreiter, Appl. Phys. Lett. 73, 620 (1998)
R. Leon, T.J. Senden, Y. Kim, C. Jagadish, A. Clark, Phys. Rev. Lett. 78, 4942 (1997)
J.A. Floro, E. Chason, M.B. Sinclair, L.B. Freund, G.A. Lucadamo, Appl. Phys. Lett. 73, 951 (1998)
T. Ogino, Surf. Sci. 386, 137 (1997)
H. Omi, D.J. Bottomley, T. Ogino, Appl. Phys. Lett. 80, 1073 (2002)
M. Borgstrom, V. Zela, W. Seifert, J. Cryst. Growth 259, 262 (2003) M. Borgström, V. Zela, W. Seifert, Nanotechnology 14, 264 (2003)
N. Li, M. Zinke-Allmang, Jpn. J. Appl. Phys. 41, 4626 (2002)
F. Leroy, J. Eymery, P. Gentile, F. Fournel, Surf. Sci. 545, 211 (2003)
T. Ishikawa, S. Kohmoto, S. Nishikawa, T. Nishimura, K. Asakawa, J. Vac. Sci. Technol. B 18, 2635 (2000)
T.I. Kamins, R.S. Williams, Appl. Phys. Lett. 71, 1201 (1997)
G. Jin, J.L. Liu, S.G. Thomas, Y.H. Luo, K.L. Wang, B. Nguyen, Appl. Phys. Lett. 75, 2752 (1999)
G. Jin, J.L. Liu, K.L. Wang, Appl. Phys. Lett. 76, 3591 (2000)
E.S. Kim, N. Usami, Y. Shiraki, Appl. Phys. Lett. 72, 1617 (1998)
O.G. Schmidt, N.Y.J. Phillipp, C. Lange, U. Denker, K. Eberl, R. Schreiner, H. Gräbeldinger, H. Schweizer, Appl. Phys. Lett. 77, 4139 (2000)
T. Kitajima, B. Liu, S.R. Leone, Appl. Phys. Lett. 80, 497 (2002)
Z. Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, G. Bauer, Appl. Phys. Lett. 82, 445 (2003)
Z. Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, G. Bauer, J. Appl. Phys. 93, 6258 (2003)
Z. Zhong, A. Halilovic, T. Fromherz, F. Schäffler, G. Bauer, Appl. Phys. Lett. 82, 4779 (2003)
Z. Zhong, A. Halilovic, H. Lichtenberger, F. Schäffler, G. Bauer, Physica E 23, 243 (2004)
Z. Zhong, G. Bauer, Appl. Phys. Lett. 84, 1922 (2004)
Z. Zhong, G. Chen, J. Stangl, T. Fromherz, F. Schäffler, G. Bauer, Physica E 21, 588 (2004)
B. Yang, F. Liu, M.G. Lagally, Phys. Rev. Lett. 92, 255025 (2004)
G.S. Kar, S. Kiravittaya, M. Stoffel, O.G. Schmidt, Phys. Rev. Lett. 93, 24610306 (2004)
X.R. Qin, B.S. Swartzentruber, M.G. Lagally, Phys. Rev. Lett. 85, 3660 (2000)
B. Borovsky, M. Krueger, E. Ganz, Phys. Rev. B 59, 1598 (1999)
Q.M. Zhang, C. Roland, P. Boguslawski, J. Bernholc, Phys. Rev. Lett. 75, 101 (1995)
E. Kim, C.W. Oh, Y.H. Lee, Phys. Rev. Lett. 79, 4621 (1997)
O.L. Alerhand, A. Nihat Berker, J.D. Joannopoulos, D. Vanderbilt, R.J. Hamers, J.E. Demuth, Phys. Rev. Lett. 64, 2406 (1990)
T.W. Poon, S. Yip, P.S. Ho, F.F. Abraham, Phys. Rev. B 45, 3521 (1992)
Q. Xie, A. Madhukar, P. Chen, N.P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995)
A. Hartmann, L. Vescan, C. Dieker, H. Luth, J. Appl. Phys. 77, 1959 (1995)
Q. Xiang, S. Li, D. Wang, K.L. Wang, J.G. Couillard, H.G. Craighead, J. Vac. Sci. Technol. B 14, 2381 (1996)
A. Rastelli, H.V. Känel, Surf. Sci. 515, L493 (2002)
C. Liu, J.M. Gibson, D.G. Cahill, T.I. Kamins, D.P. Basile, R.S. Williams, Phys. Rev. Lett. 84, 1958 (2000)
P. Raiteri, L. Miglio, Phys. Rev. B 66, 23540813 (2002)
Z. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Bauer, G. Vastola, F. Montalenti, L. Miglio, Phys. Rev. Lett 98, 176102 (2007)
Z. Zhong, O.G. Schmidt, G. Bauer, Appl. Phys. Lett. 87, 133111 (2005)
O. Kienzle, F. Ernst, M. Rühle, O.G. Schmidt, K. Eberl, Appl. Phys. Lett. 74, 269 (1999)
L. Vescan, T. Stoica, J. Appl. Phys. 91, 101196 (2002)
Rights and permissions
Copyright information
© 2007 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
(2007). One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates. In: Lateral Aligment of Epitaxial Quantum Dots. Nano Science and Technolgy. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-46936-0_12
Download citation
DOI: https://doi.org/10.1007/978-3-540-46936-0_12
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-46935-3
Online ISBN: 978-3-540-46936-0
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)