Summary
The rapid development on the information technology market implies a growing demand in quantity and quality of semiconductor and optical crystalline material. For the correlated process development and optimization, numerical simulation is playing an essential role, with the necessity for further improvement of numerical techniques and capacities. The collaborative work presented in this paper numerically deals with important issues in the field of crystal growth like global simulation of bulk crystal growth and vapor phase epitaxy, phase transition problems, as well as new methods for high performance three-dimensional flow simulation. The different numerical codes applied were developed in a complementary way to cover a wide range of aspects important for crystal growth.
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Czarny, O. et al. (2003). High Performance Computer Codes and their Application to Optimize Crystal Growth Processes, III. In: Hirschel, E.H. (eds) Numerical Flow Simulation III. Notes on Numerical Fluid Mechanics and Multidisciplinary Design (NNFM), vol 82. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-45693-3_4
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DOI: https://doi.org/10.1007/978-3-540-45693-3_4
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